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Volumn 47, Issue 3 PART 1, 2008, Pages 1813-1817
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On the origin of negative differential conductance in ultranarrow-wire- channel silicon single-electron and single-hole transistors
a
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Author keywords
Coulomb blockade; MOSFET; NDC; Negative differential conductance; Quantum dot; Resonant tunneling; SET; SHT; Silicon single electron transistor; Silicon single hole transistor
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Indexed keywords
CAPACITANCE MEASUREMENT;
CIVIL AVIATION;
COULOMB BLOCKADE;
ELECTRONS;
FIELD EFFECT TRANSISTORS;
LATTICE VIBRATIONS;
MOSFET DEVICES;
NONMETALS;
OPTICAL WAVEGUIDES;
QUANTUM ELECTRONICS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR QUANTUM DOTS;
SILICON;
TRANSIENTS;
TRANSISTORS;
TUNNELING (EXCAVATION);
WIRE;
MOSFET;
NDC;
NEGATIVE DIFFERENTIAL CONDUCTANCE;
QUANTUM DOT;
SET;
SHT;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 54249106909
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.1813 Document Type: Article |
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Times cited : (14)
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References (23)
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