Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor

Applied Physics Letters

Volumn 92, Issue 7, 2008, Pages

  Lee, Sejoon ^a,b   Miyaji, Kousuke ^a   Kobayashi, Masaharu ^c   Hiramoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRES; SILICON; TRANSISTORS;

NEGATIVE DIFFERENTIAL CONDUCTANCE OSCILLATIONS; QUANTUM LEVEL SPACING; SINGLE HOLE TRANSISTORS; SUBBAND MODULATION; TUNNEL-BARRIER HEIGHT;

COULOMB BLOCKADE;

EID: 39749089018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2857501     Document Type: Article

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