Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature

Nanotechnology

Volumn 20, Issue 17, 2009, Pages

  Nishiguchi, K ^a   Fujiwara, A ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT APPLICATIONS; FAST OPERATIONS; HIGH QUALITIES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS FETS; NANO-SCALE; NANOSCALE FIELD-EFFECT TRANSISTORS; RANDOM BEHAVIORS; RANDOM-NUMBER GENERATIONS; REAL TIME; ROOM TEMPERATURES; SILICON ON INSULATORS; SINGLE ELECTRONS;

ATOMS; DATA PROCESSING; ELECTRONS; FIELD EFFECT TRANSISTORS; METAL RECOVERY; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; RANDOM NUMBER GENERATION; SEMICONDUCTING SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

METAL OXIDE; SILICON;

ARTICLE; ELECTRICAL EQUIPMENT; ELECTROMETER; ELECTRON; INSULATOR ELEMENT; INTEGRATED CIRCUIT; NANOANALYSIS; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; SINGLE ELECTRON COUNTING STATISTIC; STATISTICAL ANALYSIS;

EID: 65549113113     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/17/175201     Document Type: Article

References (26)

1. 2008 International Technology Roadmap for Semiconductors Available at http://www.itrs.net/
2. Bourianoff G 2003 The future of nanocomputing IEEE Comput. 36 44-53
3. Bourianoff G I, Gargini P A and Nikonov D E 2007 Research directions in beyond CMOS computing Solid-State Electron. 51 1426-31 (Pubitemid 350138026)
4. Likharev K K 1999 Single-electron devices and their applications Proc. IEEE 87 606-32
5. Asahi N, Akazawa M and Amemiya Y 1997 Single-electron logic device based on the binary decision diagram IEEE Trans. Electron Devices 44 1109-16 (Pubitemid 127760358)
6. Lent C S, Tougaw P D and Porod W 1992 Bistable saturation in coupled quantum dots for quantum cellular automata Appl. Phys. Lett. 62 714-6
7. Nishiguchi K, Inokawa H, Ono Y, Fujiwara A and Takahashi Y 2004 Multilevel memory using an electrically formed single-electron box Appl. Phys. Lett. 85 1277-9
8. Nishiguchi K, Fujiwara A, Ono Y, Inokawa H and Takahashi Y 2006 Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology Appl. Phys. Lett. 88 183101
9. Nishiguchi K, Ono Y, Fujiwara A, Inokawa H and Takahashi Y 2008 Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors Appl. Phys. Lett. 92 062105
10. Lu W, Ji Z, Pfeiffer L, West K W and Rimberg A J 2003 Real-time detection of electron tunneling in a quantum dot Nature 423 422-5 (Pubitemid 36626990)
11. Fujisawa T, Hayashi T, Hirayama Y and Cheong H D 2004 Electron counting of single-electron tunneling current Appl. Phys. Lett. 84 2343-5
12. Bylander J, Duty T and Delsing P 2005 Current measurement by real-tme counting of single electrons Nature 434 361-4 (Pubitemid 40469174)
13. Fujisawa T, Hayashi T, Tomita R and Hirayama Y 2006 Bidirectional counting of single electrons Science 312 1634-6 (Pubitemid 43902658)
14. Nakajima H, Yanagi S, Komiya K and Omura Y 2002 Off-leakage and drive current characteristics of sub-100nm SOI MOSFETs and impact of quantum tunnel current IEEE Trans. Electron Devices 49 1775-82 (Pubitemid 35250410)
15. Das M B and Moore J M 1974 Measurement and interpretation of low-frequency noise in FET's IEEE Trans. Electron Devices 21 247-57
16. Jayaramans R and Sodini C G 1989 A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon IEEE Trans. Electron Devices 36 1773-82 (Pubitemid 20617806)
17. Reimbold G 1984 Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion-influence of interface states IEEE Trans. Electron Divices 31 1190-8 (Pubitemid 16472093)
18. Sarpeshkar R, Delbruck T and Mead C A 1993 White noise in MOS transistors and resistors IEEE Circuits Devices Mag. 9 23-9
19. Sze S M 2001 Physics of Semiconductor Devices: Physics and Technology 2nd edn (New York: Wiley)
20. Nishiguchi K, Koechlin C, Ono Y, Fujiwara A, Inokawa H and Yamaguchi H 2008 Single-electron-resolution electrometer based on field-effect transistor Japan. J. Appl. Phys. 47 8305-10
21. Nishiguchi K, Fujiwara A, Ono Y, Inokawa H and Takahashi Y 2007 Long retention of gain-cell dynamic random-access memory with undoped memory node IEEE Electron Device Lett. 28 48-50 (Pubitemid 46043867)
22. Saen M, Morie T, Nagata M and Iwata A 1998 A stochastic associative memory using single-electron tunneling devices IEICE Trans. Electron. E81-C 30-5
23. Tamanaka T, Morie T, Nagata M and Iwata A 2000 A single-electron stochastic associative processing circuit robust to random background-charge effects and its structure using nanocrystal floating-gate transistors Nanotechnology 11 154-60
24. Yamanaka T, Morie T, Nagata M and Iwata A 2001 A CMOS stochastic associative processor using PWM chaotic signals IEICE Trans. Electron. E84-C 1723-9 (Pubitemid 33774045)
25. Morie T, Matsuura T, Nagata M and Iwata A 2002 An efficient clustering algorithm using stochastic association model and its implementation using nanostructures Advances in Neural Information Processing Systems vol 14 ed T G Dietterich, S Becker and Z Ghahramani (Cambridge, MA: MIT Press) pp1115-22
26. Kirkpatrick S, Gelat C D and Vecchi M P 1983 Optimization by simulated annealing Science 220 671-80