Effects of discrete quantum levels on electron transport in silicon single-electron transistors with an ultra-small quantum dot

IEICE Transactions on Electronics

Volumn E84-C, Issue 8, 2001, Pages 1071-1076

  Saitoh, Masumi ^a   Hiamoto, Toshiro ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Fine structures; Negative differential conductances; Quantum level spacing; Silicon single electron transistor; Ultra small quantum dot

Indexed keywords

COMPUTER SIMULATION; COULOMB BLOCKADE; ELECTRIC POTENTIAL; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; MATHEMATICAL MODELS; PHONONS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

DISCRETE QUANTUM LEVELS; FINE STRUCTURES; NEGATIVE DIFFERENTIAL CONDUCTANCES; SILICON SINGLE ELECTRON TRANSISTORS; ULTRASMALL QUANTUM DOT;

TRANSISTORS;

EID: 0035423128     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. Fabrication technique for Si single-electron transistor operating at room temperature
2. Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate
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4. Silicon single-electron quantum-dot transistor switch operating at room temperature
5. Room-temperature operation of multifunctional single-electron transistor logic
6. Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor
7. Single-electron devices and their applications
8. Quantum energy and charging energy in point contact MOSFETs acting as single electron transistors
9. Theory of single-electron charging of quantum wells and dots
10. Theory of Coulomb-blockade oscillations in the conductance of a quantum dot
11. Equivalence between resonant tunneling and sequential tunneling in double-barrier diodes
12. Acoustic phonon scattering in silicon quantum dots
13. Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering