Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Miyaji, Kousuke ^a   Saitoh, Masumi ^a,b   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; SILICON;

FULL WIDTH AT HALF MAXIMUM (FWHM); NEGATIVE DIFFERENTIAL CONDUCTANCE (NDC); SINGLE-HOLE TRANSISTORS (SHT);

MOSFET DEVICES;

EID: 33645664768     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2192637     Document Type: Article

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