SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 8, 2013, Pages

Gate-tunable selective operation of single electron/hole transistor modes in a silicon single quantum dot at room temperature

(5) Lee, Sejoon a Lee, Youngmin a Song, Emil B b Wang, Kang L b Hiramoto, Toshiro c

a Dongguk University (South Korea)

b UNIVERSITY OF CALIFORNIA (United States)

c INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE BIAS; QUANTUM STATE; QUANTUM TRANSPORT; ROOM TEMPERATURE; SI NANOWIRE; SINGLE ELECTRON; SINGLE QUANTUM DOT; TUNNEL BARRIER;

NANOWIRES; QUANTUM OPTICS; QUANTUM THEORY; SEMICONDUCTOR QUANTUM DOTS; SINGLE ELECTRON TRANSISTORS; TRANSIENTS;

SILICON;

EID: 84874826861 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4793564 Document Type: Article

Times cited : (19)

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