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Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

Single-electron shuttle based on a silicon quantum dot

(7) Chan, K W a Mottonen M b Kemppinen, A c Lai, N S a Tan, K Y a,b Lim, W H a Dzurak, A S a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b AALTO UNIVERSITY (Finland)

c CENTRE FOR METROLOGY AND ACCREDITATION MIKES (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

AC VOLTAGE; AC-DRIVING; ELECTRON LAYERS; METAL OXIDE SEMICONDUCTOR; OPERATION FREQUENCY; SEQUENTIAL TUNNELING; SINGLE ELECTRON; SOURCE-DRAIN; TOP GATE;

ELECTRON GAS; ELECTRONS; PHASE INTERFACES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79959443668 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3593491 Document Type: Article

Times cited : (42)

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