Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Lee, Sejoon ^a,b   Hiramoto, Toshiro ^b,c  

^a Dongguk University   (South Korea)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CIRCUIT BREAKERS; ELECTRIC WIRE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; QUANTUM ELECTRONICS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SULFATE MINERALS; TRANSPORT PROPERTIES;

COULOMB BLOCKADE (CB); DEVICE PERFORMANCES; DOT SIZE; QUANTUM DOT; ROOM TEMPERATURES; SELF-ASSEMBLED; VALENCE BAND OFFSET;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 49149100076     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2958224     Document Type: Article

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