Size dependence of the characteristics of si single-electron transistors on SIMOX substrates

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1213-1217

  Takahashi, Yasuo ^a   Namatsu, Hideo ^a   Kurihara, Kenji ^a   Iwadate, Kazumi ^a   Nagase, Masao ^a   Murase, Katsumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON CYCLOTRON RESONANCE; ELECTRON DEVICES; ELECTRON TUNNELING; ETCHING; ION IMPLANTATION; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

CHEMICAL ETCHING; PATTERN DEPENDENT OXIDATION; REPEATED THERMAL OXIDATION; SINGLE ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 0030214551     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506771     Document Type: Article

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