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Volumn 52, Issue 10 PART2, 2013, Pages

Electrical characteristics of Ti/Al contacts on AlInN:Mg/GaN heterostructures

(8) Kim, Seongjun a Kim, Hee Jin b Choi, Suk b Lochner, Zachary b Ryou, Jae Hyun b,c Dupuis, Russell D b Ahn, Kwang Soon d Kim, Hyunsoo a

a Chonbuk National University (South Korea)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

c University of Houston (United States)

d Yeungnam University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; METAL CONTACTS; MG-DOPING; SECONDARY ION MASS SPECTROSCOPY; SPECIFIC CONTACT RESISTANCES; TEMPERATURE DEPENDENCE; THERMAL-ANNEALING; TRANSMISSION LINE MODELING;

ELECTRIC CONTACTORS; ELECTRON GAS; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; TEMPERATURE MEASUREMENT; TRANSMISSION LINE THEORY;

CONTACT RESISTANCE;

EID: 84887121735 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.10MA07 Document Type: Conference Paper

Times cited : (2)

References (33)

1
- 0032205614
- S. Imanaga and H. Kawai: Jpn. J. Appl. Phys. 37 (1998) 5906.
- (1998) Jpn. J. Appl. Phys. , vol.37 , pp. 5906
- Imanaga, S.¹ Kawai, H.²

2
- 0001590229
- O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck: J. Appl. Phys. 85 (1999) 3222.
- (1999) J. Appl. Phys. , vol.85 , pp. 3222
- Ambacher, O.¹ Smart, J.² Shealy, J.R.³ Weimann, N.G.⁴ Chu, K.⁵ Murphy, M.⁶ Schaff, W.J.⁷ Eastman, L.F.⁸ Dimitrov, R.⁹ Wittmer, L.¹⁰ Stutzmann, M.¹¹ Rieger, W.¹² Hilsenbeck, J.¹³

3
- 0035517506
- G. Simin, X. Hu, A. Tarakji, J. Zhang, A. Koudymov, S. Saygi, J. Yang, A. Khan, M. S. Shur, and R. Gaska: Jpn. J. Appl. Phys. 40 (2001) L1142.
- (2001) Jpn. J. Appl. Phys. , vol.40
- Simin, G.¹ Hu, X.² Tarakji, A.³ Zhang, J.⁴ Koudymov, A.⁵ Saygi, S.⁶ Yang, J.⁷ Khan, A.⁸ Shur, M.S.⁹ Gaska, R.¹⁰

4
- 71549128981
- S. Zhang, M. C. Li, Z. H. Feng, B. Liu, J. Y. Yin, and L. C. Zhao: Appl. Phys. Lett. 95 (2009) 212101.
- (2009) Appl. Phys. Lett. , vol.95 , pp. 212101
- Zhang, S.¹ Li, M.C.² Feng, Z.H.³ Liu, B.⁴ Yin, J.Y.⁵ Zhao, L.C.⁶

5
- 72049125337
- C. Ostermaier, G. Pozzovivo, J.-F. Carlin, B. Basmar, W. Schrenk, Y. Douvry, C. Garquière, J.-C. DeJaeger, K. Čičo, K. Fröhlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, and J. Kuzmík: IEEE Electron Device Lett. 30 (2009) 1030.
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1030
- Ostermaier, C.¹ Pozzovivo, G.² Carlin, J.-F.³ Basmar, B.⁴ Schrenk, W.⁵ Douvry, Y.⁶ Garquière, C.⁷ Dejaeger, J.-C.⁸ Čičo, K.⁹ Fröhlich, K.¹⁰ Gonschorek, M.¹¹ Grandjean, N.¹² Strasser, G.¹³ Pogany, D.¹⁴ Kuzmík, J.¹⁵

6
- 0023040588
- H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda: Appl. Phys. Lett. 48 (1986) 353.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 353
- Amano, H.¹ Sawaki, N.² Akasaki, I.³ Toyoda, Y.⁴

7
- 0026867861
- S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) 1258.
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1258
- Nakamura, S.¹ Iwasa, N.² Senoh, M.³ Mukai, T.⁴

8
- 0036610915
- J. Kuzmík: Semicond. Sci. Technol. 17 (2002) 540.
- (2002) Semicond. Sci. Technol. , vol.17 , pp. 540
- Kuzmík, J.¹

9
- 34547842136
- S. Iwata, Y. Nanjo, T. Okuno, S. Kurai, and T. Taguchi: Jpn. J. Appl. Phys. 46 (2007) 3394.
- (2007) Jpn. J. Appl. Phys. , vol.46 , pp. 3394
- Iwata, S.¹ Nanjo, Y.² Okuno, T.³ Kurai, S.⁴ Taguchi, T.⁵

10
- 54249088066
- Q. Guo, T. Tanaka, M. Nishio, and H. Ogawa: Jpn. J. Appl. Phys. 47 (2008) 612.
- (2008) Jpn. J. Appl. Phys. , vol.47 , pp. 612
- Guo, Q.¹ Tanaka, T.² Nishio, M.³ Ogawa, H.⁴

11
- 79960498818
- S. Pandey, B. Fraboni, D. Cavalcoli, A. Minj, and A. Cavallini: Appl. Phys. Lett. 99 (2011) 012111.
- (2011) Appl. Phys. Lett. , vol.99 , pp. 012111
- Pandey, S.¹ Fraboni, B.² Cavalcoli, D.³ Minj, A.⁴ Cavallini, A.⁵

12
- 80855137019
- Z. T. Chen, K. Fujita, and T. Egawa: Appl. Phys. Lett. 99 (2011) 183504.
- (2011) Appl. Phys. Lett. , vol.99 , pp. 183504
- Chen, Z.T.¹ Fujita, K.² Egawa, T.³

13
- 79751476802
- H. Sun, A. R. Alt, H. Benedickter, E. Feltin, J.-F. Carlin, M. Gonschorek, N. Grandjean, and C. R. Bolognesi: Phys. Status Solidi A 208 (2011) 429.
- (2011) Phys. Status Solidi A , vol.208 , pp. 429
- Sun, H.¹ Alt, A.R.² Benedickter, H.³ Feltin, E.⁴ Carlin, J.-F.⁵ Gonschorek, M.⁶ Grandjean, N.⁷ Bolognesi, C.R.⁸

14
- 77949717505
- G. Pozzovivo, J. Kuzmík, C. Giesen, M. Heuken, J. Liday, G. Strasser, and D. Pogany: Phys. Status Solidi C 6 (2009) S999.
- (2009) Phys. Status Solidi C , vol.6
- Pozzovivo, G.¹ Kuzmík, J.² Giesen, C.³ Heuken, M.⁴ Liday, J.⁵ Strasser, G.⁶ Pogany, D.⁷

15
- 79960082731
- J. Lee, M. Yan, B. Ofuonye, J. Jang, X. Gao, S. Guo, and I. Adesida: Phys. Status Solidi A 208 (2011) 1538.
- (2011) Phys. Status Solidi A , vol.208 , pp. 1538
- Lee, J.¹ Yan, M.² Ofuonye, B.³ Jang, J.⁴ Gao, X.⁵ Guo, S.⁶ Adesida, I.⁷

16
- 75649105387
- L. Zhou, J. H. Leach, X. Ni, H. Morkoç, and D. J. Smith: J. Appl. Phys. 107 (2010) 014508.
- (2010) J. Appl. Phys. , vol.107 , pp. 014508
- Zhou, L.¹ Leach, J.H.² Ni, X.³ Morkoc, H.⁴ Smith, D.J.⁵

17
- 84867061804
- S. Kim, H. J. Kim, S. Choi, Z. Lochner, J.-H. Ryou, R. D. Dupuis, and H. Kim: Electron. Lett. 48 (2012) 1306.
- (2012) Electron. Lett. , vol.48 , pp. 1306
- Kim, S.¹ Kim, H.J.² Choi, S.³ Lochner, Z.⁴ Ryou, J.-H.⁵ Dupuis, R.D.⁶ Kim, H.⁷

18
- 0004071496
- Wiley, Hoboken, NJ, 3rd ed.
- D. K. Schroder: Semiconductor Material and Device Characterization (Wiley, Hoboken, NJ, 2006) 3rd ed., p. 138.
- (2006) Semiconductor Material and Device Characterization , pp. 138
- Schroder, D.K.¹

19
- 33244495723
- J. Kuzmík, A. Kostopoulos, G. Konstantinidis, J.-F. Carlin, A. Georgakilas, and D. Pogany: IEEE Trans. Electron Devices 53 (2006) 422.
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 422
- Kuzmík, J.¹ Kostopoulos, A.² Konstantinidis, G.³ Carlin, J.-F.⁴ Georgakilas, A.⁵ Pogany, D.⁶

20
- 79953787051
- C.-F. Lo, L. Liu, C. Y. Chang, F. Ren, V. Craciun, S. J. Pearton, Y. W. Heo, O. Laboutin, and J. W. Johnson: J. Vac. Sci. Technol. B 29 (2011) 021002.
- (2011) J. Vac. Sci. Technol. B , vol.29 , pp. 021002
- Lo, C.-F.¹ Liu, L.² Chang, C.Y.³ Ren, F.⁴ Craciun, V.⁵ Pearton, S.J.⁶ Heo, Y.W.⁷ Laboutin, O.⁸ Johnson, J.W.⁹

21
- 33746056864
- F. Roccaforte, F. Iucolano, F. Giannazzo, A. Alberti, and V. Raineri: Appl. Phys. Lett. 89 (2006) 022103.
- (2006) Appl. Phys. Lett. , vol.89 , pp. 022103
- Roccaforte, F.¹ Iucolano, F.² Giannazzo, F.³ Alberti, A.⁴ Raineri, V.⁵

22
- 33747198325
- A. Vertiatchikh, E. Kaminsky, J. Teetsov, and K. Robinson: Solid-State Electron. 50 (2006) 1425.
- (2006) Solid-State Electron. , vol.50 , pp. 1425
- Vertiatchikh, A.¹ Kaminsky, E.² Teetsov, J.³ Robinson, K.⁴

23
- 43949095851
- L. Wang, F. M. Mohammed, and I. Adesida: J. Appl. Phys. 103 (2008) 093516.
- (2008) J. Appl. Phys. , vol.103 , pp. 093516
- Wang, L.¹ Mohammed, F.M.² Adesida, I.³

24
- 80052794032
- A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, and M. R. Jennings: Microelectron. Eng. 88 (2011) 3140.
- (2011) Microelectron. Eng. , vol.88 , pp. 3140
- Fontserè, A.¹ Pérez-Tomás, A.² Placidi, M.³ Fernández-Martínez, P.⁴ Baron, N.⁵ Chenot, S.⁶ Cordier, Y.⁷ Moreno, J.C.⁸ Gammon, P.M.⁹ Jennings, M.R.¹⁰

25
- 33744539904
- F. M. Mohammed, L. Wang, and I. Adesida: Appl. Phys. Lett. 88 (2006) 212107.
- (2006) Appl. Phys. Lett. , vol.88 , pp. 212107
- Mohammed, F.M.¹ Wang, L.² Adesida, I.³

26
- 64349118066
- Z. H. Liu, S. Arulkumaran, and G. I. Ng: Appl. Phys. Lett. 94 (2009) 142105.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 142105
- Liu, Z.H.¹ Arulkumaran, S.² Ng, G.I.³

27
- 84887031329
- F. Medjdoub, J.-F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, D. Ducatteau, C. Gaquiere, N. Grandjean, and E. Kohn: IEDM Tech. Dig., 2006.
- (2006) IEDM Tech. Dig.
- Medjdoub, F.¹ Carlin, J.-F.² Gonschorek, M.³ Feltin, E.⁴ Py, M.A.⁵ Ducatteau, D.⁶ Gaquiere, C.⁷ Grandjean, N.⁸ Kohn, E.⁹

28
- 79956017775
- D. Qiao, L. S. Yu, L. Jia, P. M. Asbeck, S. S. Lau, and T. E. Haynes: Appl. Phys. Lett. 80 (2002) 992.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 992
- Qiao, D.¹ Yu, L.S.² Jia, L.³ Asbeck, P.M.⁴ Lau, S.S.⁵ Haynes, T.E.⁶

29
- 42349092105
- P. Kordoš, D. Donoval, M. Florovič, J. Kováč, and D. Gregušova: Appl. Phys. Lett. 92 (2008) 152113.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 152113
- Kordoš, P.¹ Donoval, D.² Florovič, M.³ Kováč, J.⁴ Gregušova, D.⁵

30
- 28044461466
- Z. Yarar, B. Ozdemir, and M. Ozdemir: Phys. Status Solidi B 242 (2005) 2872.
- (2005) Phys. Status Solidi B , vol.242 , pp. 2872
- Yarar, Z.¹ Ozdemir, B.² Ozdemir, M.³

31
- 0000837942
- A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, S. P. DenBaars, U. K. Mishra, and J. S. Speck: J. Appl. Phys. 87 (2000) 369.
- (2000) J. Appl. Phys. , vol.87 , pp. 369
- Saxler, A.¹ Debray, P.² Perrin, R.³ Elhamri, S.⁴ Mitchel, W.C.⁵ Elsass, C.R.⁶ Smorchkova, I.P.⁷ Heying, B.⁸ Haus, E.⁹ Fini, P.¹⁰ Ibbetson, J.P.¹¹ Keller, S.¹² Petroff, P.M.¹³ Denbaars, S.P.¹⁴ Mishra, U.K.¹⁵ Speck, J.S.¹⁶

32
- 64249138249
- R. Menozzi, G. A. Umana-Membreno, B. D. Nener, G. Parish, G. Sozzi, L. Faraone, and U. K. Mishra: IEEE Trans. Device Mater. Reliab. 8 (2008) 255.
- (2008) IEEE Trans. Device Mater. Reliab. , vol.8 , pp. 255
- Menozzi, R.¹ Umana-Membreno, G.A.² Nener, B.D.³ Parish, G.⁴ Sozzi, G.⁵ Faraone, L.⁶ Mishra, U.K.⁷

33
- 84880192411
- S. Kim, C. C. Choi, and H. Kim: Electron. Lett. 49 (2013) 651.
- (2013) Electron. Lett. , vol.49 , pp. 651
- Kim, S.¹ Choi, C.C.² Kim, H.³

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