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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 2, 2011, Pages

Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures

(9) Lo, C F a Liu, L a Chang, C Y a Ren, F a Craciun, V a Pearton, S J a Heo, Y W b Laboutin, O c Johnson, J W c

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

b Kyungpook National University (South Korea)

c KOPIN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DRAIN CURRENT; ELECTRIC CONTACTORS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; MORPHOLOGY; OHMIC CONTACTS;

ANNEALING TEMPERATURES; BARRIER HEIGHTS; CONTACT METALLIZATION; CONTACT MORPHOLOGY; DIFFUSE SCATTERING; EXTRINSIC TRANSCONDUCTANCE; GAN CAP; GAN CAP LAYERS; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; HIGHER TEMPERATURES; MAXIMUM DRAIN CURRENT; OUT-DIFFUSION; SCHOTTKY CONTACTS; SPECIFIC CONTACT RESISTIVITY; TI/AL/NI/AU; TRANSFER RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79953787051 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3545811 Document Type: Article

Times cited : (15)

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