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Applied Physics Letters

Volumn 95, Issue 21, 2009, Pages

High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

(6) Zhang, S a Li, M C a Feng, Z H b Liu, B b Yin, J Y b Zhao, L C a

a HARBIN INSTITUTE OF TECHNOLOGY (China)

b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; DOUBLE CHANNEL; HETEROSTRUCTURES; HIGH ELECTRON MOBILITY; LATTICE-MATCHED; ROOM TEMPERATURE; SINGLE-CHANNEL; STRUCTURE OPTIMIZATION; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; SHEET RESISTANCE; STRUCTURAL OPTIMIZATION;

TWO DIMENSIONAL ELECTRON GAS;

EID: 71549128981 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3264961 Document Type: Article

Times cited : (43)

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