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Journal of Applied Physics

Volumn 107, Issue 1, 2010, Pages

Ti/Al/Ni/Au Ohmic contacts for AlInN/AlN/GaN-based heterojunction field-effect transistors

(5) Zhou, Lin a Leach, Jacob H b Ni, Xianfeng b Morko̧, Hadis b Smith, David J a

a ARIZONA STATE UNIVERSITY (United States)

b Virginia Commonwealth University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; ANALYTICAL TECHNIQUES; CONDUCTION PATHS; CONTACT PERFORMANCE; DISLOCATION-FREE; GAN LAYERS; INCLUSION DEFECTS; METAL CONTACTS; MUSHROOM SHAPE; THREADING DISLOCATION; TI/AL/NI/AU;

ELECTRIC CONTACTORS; ELECTRON GAS; GALLIUM NITRIDE; HETEROJUNCTIONS; INCLUSIONS; OHMIC CONTACTS; PHASE SEPARATION; SURFACE ROUGHNESS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

FIELD EFFECT TRANSISTORS;

EID: 75649105387 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3275241 Document Type: Article

Times cited : (32)

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