Pd/InAlN Schottky diode with low reverse current by sulfide treatment

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Chen, Z T ^a   Fujita, K ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; ORDERS OF MAGNITUDE; PD CONTACTS; REVERSE CURRENTS; S-O BONDS; SCHOTTKY DIODES; SULFIDE TREATMENT; SURFACE PASSIVATION; TUNNELING CURRENT;

PASSIVATION; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SCHOTTKY BARRIER DIODES;

EID: 80855137019     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659477     Document Type: Article

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