Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1425-1429

  Vertiatchikh, Alexei ^a   Kaminsky, Ed ^a   Teetsov, Julie ^a   Robinson, Kevin ^b  

^a GE GLOBAL RESEARCH   (United States)

^b Lockheed Martin MS2 Radar Systems   (United States)

Author keywords

AlGaN; Defects; GaN; HEMT; Ohmic contacts; Reliability

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; ETCHING; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SAPPHIRE; TITANIUM ALLOYS;

ALGAN; GAN; OPTICAL MICROSCOPE; STRUCTURAL PROPERTIES;

OHMIC CONTACTS;

EID: 33747198325     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.07.003     Document Type: Article

References (10)

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