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Volumn 48, Issue 20, 2012, Pages 1306-1308

Carrier transport properties of Mg-doped InAlN films

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DEEP-LEVEL DEFECTS; ELECTRICAL RESISTIVITY; HOPPING CONDUCTION; METAL CONTACTS; MG-DOPING; TEMPERATURE DEPENDENT; TRANSMISSION LINE MODELS;

EID: 84867061804     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.2238     Document Type: Article
Times cited : (7)

References (6)
  • 2
    • 75649105387 scopus 로고    scopus 로고
    • Ti/Al/Ni/Au ohmic contacts for AlInN/AlN/GaN-based heterojunctions field-effect transistors
    • 10.1063/1.3275241 0021-8979
    • Zhou, L., Leach, J.H., Ni, X., Morkoç, H., and Smith, D.J.: ' Ti/Al/Ni/Au ohmic contacts for AlInN/AlN/GaN-based heterojunctions field-effect transistors ', J. Appl. Phys., 2010, 107, (1), p. 014508-1-014508-5 10.1063/1.3275241 0021-8979
    • (2010) J. Appl. Phys. , vol.107 , Issue.1 , pp. 0145081-0145085
    • Zhou, L.1    Leach, J.H.2    Ni, X.3    Morkoç, H.4    Smith, D.J.5
  • 3
    • 0000669296 scopus 로고    scopus 로고
    • Conductivity and hall effect characterization of highly resistive molecular-beam epitaxial GaN layers
    • 10.1063/1.1319966 0021-8979
    • Kordoš, P., Morvic, M., Betko, J., Hove, J.M., Van Wowchak, A.M., and Chow, P.P.: ' Conductivity and hall effect characterization of highly resistive molecular-beam epitaxial GaN layers ', J. Appl. Phys., 2000, 88, (10), p. 5821-5826 10.1063/1.1319966 0021-8979
    • (2000) J. Appl. Phys. , vol.88 , Issue.10 , pp. 5821-5826
    • Kordoš, P.1    Morvic, M.2    Betko, J.3    Hove, J.M.4    Van Wowchak, A.M.5    Chow, P.P.6
  • 6
    • 36549094962 scopus 로고
    • Nonallyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band
    • 10.1063/1.103345 0003-6951
    • Yamamoto, H., Fang, Z.-Q., and Look, D.C.: ' Nonallyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: influence of deep donor band ', Appl. Phys. Lett, 1990, 57, (15), p. 1537-1539 10.1063/1.103345 0003-6951
    • (1990) Appl. Phys. Lett , vol.57 , Issue.15 , pp. 1537-1539
    • Yamamoto, H.1    Fang, Z.-Q.2    Look, D.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.