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Electronics Letters

Volumn 48, Issue 20, 2012, Pages 1306-1308

Carrier transport properties of Mg-doped InAlN films

(7) Kim, S a Kim, H J b Choi, S b Lochner, Z b Ryou, J H b Dupuis, R D b Kim, H a

a Chonbuk National University (South Korea)

b GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; DEEP-LEVEL DEFECTS; ELECTRICAL RESISTIVITY; HOPPING CONDUCTION; METAL CONTACTS; MG-DOPING; TEMPERATURE DEPENDENT; TRANSMISSION LINE MODELS;

CARRIER TRANSPORT; ELECTRIC CONDUCTIVITY; INTERFACE STATES; TRANSMISSION LINE THEORY;

TRANSPORT PROPERTIES;

EID: 84867061804 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el.2012.2238 Document Type: Article

Times cited : (7)

References (6)

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