Low resistance ohmic contacts annealed at 600 °C on a InAlN/GaN heterostructure with SiCl4-reactive ion etching surface treatment

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Pozzovivo, G ^a   Kuzmik, J ^a,b   Giesen, C ^c   Heuken, M ^c   Liday, J ^d   Strasser, G ^a   Pogany, D ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^c AIXTRON AG   (Germany)

^d SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CARBON IMPURITIES; ELECTRICAL CHARACTERIZATION; INALN/GAN HETEROSTRUCTURE; LOW RESISTANCE; PLASMA PRE-TREATMENT; PRE-TREATMENT; SPECIFIC CONTACT; TI/AL/NI/AU;

AUGER ELECTRON SPECTROSCOPY; CONTACT RESISTANCE; DISTILLATION; ELECTRIC CONTACTORS; OHMIC CONTACTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; REACTIVE ION ETCHING;

SURFACE TREATMENT;

EID: 77949717505     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880839     Document Type: Article

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