Structural and optical properties of AlInN films grown on sapphire substrates

Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 612-615

  Guo, Qixin ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

AlInN; Crystal structure; III V semiconductor; Optical properties; Surface morphology

Indexed keywords

ALUMINA; ALUMINUM; ARGON; ATOMIC SPECTROSCOPY; CORUNDUM; CRYSTAL ATOMIC STRUCTURE; CRYSTAL STRUCTURE; DIFFRACTION; ENERGY GAP; INDIUM; INERT GASES; MAGNETRON SPUTTERING; OPTICAL MATERIALS; OPTICAL MICROSCOPY; OPTICAL PROPERTIES; SAPPHIRE; SUBSTRATES; TARGETS; X RAY DIFFRACTION ANALYSIS;

AL COMPOSITIONS; ALINN; ATOMIC FORCES; BANDGAP ENERGIES; BANDGAP STRUCTURES; C -AXIS; DIFFRACTION PEAKS; III-V SEMICONDUCTOR; OPTICAL TRANSMITTANCES; RF POWERS; SAPPHIRE SUBSTRATES; SMOOTH SURFACES; SPECTRA ANALYSES;

OPTICAL FILMS;

EID: 54249088066     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.612     Document Type: Article

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