Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1030-1032

  Ostermaier, Clemens ^a   Pozzovivo, Gianmauro ^a   Carlin, Jean François ^b   Basnar, Bernhard ^a   Schrenk, Werner ^a   Douvry, Yannick ^c   Gaquière, Christophe ^c   DeJaeger, Jean Claude ^c   Čičo, Karol ^d   Fröhlich, Karol ^d   Gonschorek, Marcus ^b   Grandjean, Nicolas ^b   Strasser, Gottfried ^a   Pogany, Dionyz ^a   Kuzmik, Jan ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b EPFL   (Switzerland)

^c INSTITUT D ELECTRONIQUE   (France)

^d INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

Enhancement mode (E mode); Gate recess; High electron mobility transistor (HEMT); InAlN GaN heterostructure

Indexed keywords

CAP LAYERS; CURRENT DISPERSIONS; ENHANCEMENT MODES; ENHANCEMENT-MODE; GAN LAYERS; GATE LENGTH; GATE RECESS; INALN/GAN HETEROSTRUCTURE; MAXIMUM DRAIN CURRENT; MAXIMUM TRANSCONDUCTANCE; NORMALLY OFF; SELECTIVE ETCHING; SURFACE PASSIVATION; ULTRA-THIN; ULTRA-THIN BARRIERS;

CUTOFF FREQUENCY; DIGITAL DEVICES; DIGITAL INTEGRATED CIRCUITS; DRAIN CURRENT; ELECTRIC RESISTANCE; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 72049125337     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2029532     Document Type: Article

References (13)

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