Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from -50 to 200 °c

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Liu, Z H ^a   Arulkumaran, S ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROJUNCTIONS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; BAND EDGES; BARRIER HEIGHTS; CONDUCTION BAND EDGES; CONTACT CHARACTERISTICS; ELECTRON DENSITIES; ENERGY DIFFERENCES; HIGH DENSITIES; ORDER OF MAGNITUDES; POWER INDICES; POWER-LAW EQUATIONS; QUANTUM WELLS; SAPPHIRE SUBSTRATES; SPECIFIC CONTACT RESISTIVITIES; TEMPERATURE DEPENDENCES; TEMPERATURE DEPENDENTS; TEMPERATURE RANGES; THERMIONIC FIELD EMISSIONS; TWO-DIMENSIONAL ELECTRON GASSES (2DEG);

CORUNDUM; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTORS; ELECTRIC RESISTANCE; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; FIELD EMISSION; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE (FLUID); OHMIC CONTACTS; SAPPHIRE; SUBSTRATES; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 64349118066     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3114422     Document Type: Article

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