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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 6 A, 2007, Pages 3394-3396

Growth and luminescence properties of subsequently grown AlInN layers on AlN homoepitaxial layers by ammonia gas source molecular beam epitaxy

(5) Iwata, Shiro a Nanjo, Yoshiyuki a Okuno, Toshihiro a Kurai, Satoshi a Taguchi, Tsunemasa a

a YAMAGUCHI UNIVERSITY (Japan)

Author keywords

Al rich AlinN; Cathodoluminescence; Deep ultraviolet; Gas source molecular beam epitaxy; III nitride

Indexed keywords

CATHODOLUMINESCENCE; GAS SOURCE MOLECULAR BEAM EPITAXY; PHASE SEPARATION; TERNARY SYSTEMS;

DEEP ULTRAVIOLET; NEAR-BAND-EDGE EMISSIONS;

EPITAXIAL GROWTH;

EID: 34547842136 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.3394 Document Type: Article

Times cited : (8)

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