High-speed and low-noise AlInN/GaN HEMTs on SiC

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 2, 2011, Pages 429-433

  Sun, Haifeng ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Feltin, Eric ^b   Carlin, Jean François ^b   Gonschorek, Marcus ^b   Grandjean, Nicolas ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

AlInN GaN; high electron mobility transistors; microwave noise; millimeter wave transistors

Indexed keywords

ALINN/GAN; ASSOCIATED GAIN; BEST VALUE; CUT-OFF; DEEP SUBMICROMETER; GAN HEMTS; HIGH ELECTRON MOBILITY; HIGH-SPEED; LOW NOISE; LOW-NOISE APPLICATIONS; MICROWAVE NOISE; MILLIMETER-WAVE TRANSISTORS; MINIMUM NOISE FIGURE; PARASITIC CAPACITANCE; SOURCE-DRAIN;

ELECTRON MOBILITY; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SILICON CARBIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79751476802     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000518     Document Type: Article

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