Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations

Solid-State Electronics

Volumn 89, Issue , 2013, Pages 171-176

  Ryu, Min Ki ^a   Ko Park, Sang Hee ^a   Hwang, Chi Sun ^a   Yoon, Sung Min ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

Bottom gate; In Ga Zn O (IGZO); Oxide semiconductor; Thin film transistor; Top gate

Indexed keywords

BOTTOM-GATE; IN-GA-ZN-O (IGZO); OXIDE SEMICONDUCTOR; THIN-FILM TRANSISTOR (TFTS); TOP-GATE;

ACTIVATION ENERGY; GALLIUM; INDIUM; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

ZINC;

EID: 84884479546     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.08.008     Document Type: Article

References (31)

1. J.Y. Kwon, K.S. Son, J.S. Jung, T.S. Kim, M.K. Ryu, and K.B. Park IEEE Electron Dev Lett 29 2008 1309
2. H. Ohara, T. Sasaki, K. Noda, S. Ito, M. Sasaki, and Y. Endo Jpn J Appl Phys 49 2010 03CD02
3. Lu HH, Ting HC, Shih TH, Chen CY, Chuang CS, Lin Y. SID Int. Symp. Digest Tech. Papers; 2010. p. 1136.
4. T. Osada, K. Akimoto, T. Sato, M. Ikeda, M. Tsubuku, and J. Sakata Jpn J Appl Phys 49 2010 03CC02
5. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature 432 2004 488
6. T. Kamiya, K. Nomura, and H. Hosono Sci Technol Adv Mater 11 2010 044305
7. E. Fortunao, E. Barquinha, and P. Martins Adv Mater 24 2012 2945
8. A. Suresh, and J.F. Muth Appl Phys Lett 92 2008 033502
9. D. Stryakhilev, J.S. Park, J. Lee, T.W. Kim, Y.S. Pyo, and D.B. Lee Electrochem Solid-State Lett 12 2009 J101
10. K.H. Ji, J.I. Kim, H.Y. Jung, S.Y. Park, R. Choi, and Y.G. Mo Microelectr Eng 88 2011 1412
11. M.D.H. Chowdhury, P. Migliorato, and J. Jang Appl Phys Lett 97 2010 173506
12. H. Oh, S.M. Yoon, M.K. Ryu, C.S. Hwang, S. Yang, and S.H. Ko Park Phys Lett 97 2010 183502
13. B. Kim, E. Chong, D.H. Kim, Y.W. Jeon, D.H. Kim, and S.Y. Lee Appl Phys Lett 99 2011 062108
14. G.W. Chang, T.C. Chang, J.C. Jhu, T.M. Tsai, Y.E. Syu, and K.C. Chang Appl Phys Lett 100 2012 182103
15. S.Y. Huang, T.C. Chang, L.W. Lin, M.C. Yang, M.C. Chen, and J.C. Jhu Appl Phys Lett 100 2012 222901
16. T.Y. Hsieh, T.C. Chang, T.C. Chen, M.Y. Tsai, Y.T. Chen, and F.Y. Jian IEEE Electron Dev Lett 33 2012 1000
17. K. Nomura, T. Kamiya, Y. Kikuchi, M. Hirano, and H. Hosono Thin Solid Films 518 2010 3012
18. J.S. Park, J.K. Jeong, H.J. Chung, Y.G. Mo, and H.D. Kim Appl Phys Lett 92 2008 072104
19. J.K. Jeong, H.W. Yang, J.H. Jeong, Y.G. Mo, and H.D. Kim Appl Phys Lett 93 2008 123508
20. K.H. Lee, J.S. Jung, K.S. Son, J.S. Park, T.S. Kim, and R. Choi Appl Phys Lett 95 2009 232106
21. S.Y. Sung, J.H. Choi, U.B. Han, K.C. Lee, J.H. Lee, and J.J. Kim Appl Phys Lett 96 2010 102107
22. K.H. Ji, J.I. Kim, H.Y. Jung, S.Y. Park, Y.G. Mo, and J.H. Jeong J Electrochem Soc 157 2010 H983
23. J.Y. Bak, S.M. Yoon, S. Yang, G.H. Kim, S.H. Ko Park, and C.S. Hwang J Vac Sci Technol B 30 2012 041208
24. K. Abe, K. Takahashi, A. Sato, H. Kumomi, K. Nomura, and T. Kamiya IEEE Trans Electron Dev 59 2012 1928
25. S.H. Ko Park, D.H. Cho, C.S. Hwang, S. Yang, M.K. Ryu, and C.W. Byun ETRI J 31 2009 653
26. K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono Appl Phys Lett 85 2004 1993
27. H.C. Slade, M.S. Shur, S.C. Deane, and M. Hack Appl Phys Lett 69 1996 2560
28. L. Pichon, A. Mercha, R. Carin, O. Bonnaud, T. M-Brahim, and Y. Helen Appl Phys Lett 77 2000 576
29. J. Jeong, J.K. Jeong, J.S. Park, Y.G. Mo, and Y. Hong Jpn J Appl Phys 49 2010 03CB02
30. M.D.H. Chowdhury, P. Migliorato, and J. Jang Appl Phys Lett 98 2011 153511
31. J.K. Jeong, S. Yang, D.H. Cho, S.H. Ko Park, C.S. Hwang, and K.I. Cho Appl Phys Lett 95 2009 123505