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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 4, 2012, Pages

Effect of In-Ga-Zn-O active layer channel composition on process temperature for flexible oxide thin-film transistors

(6) Bak, Jun Yong a Yoon, Sung Min a Yang, Shinhyuk a,b Kim, Gi Heon b Ko Park, Sang Hee b Hwang, Chi Sun b

a Kyung Hee University (South Korea)

b Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GALLIUM; GALLIUM ALLOYS; SUBSTRATES; ZINC;

ACTIVE LAYER; CONSTANT CURRENT STRESS; FIELD-EFFECT MOBILITIES; FINAL HEAT TREATMENTS; IN-GA-ZN-O; POLYETHYLENE NAPHTHALATE; PROCESS TEMPERATURE; SUBTHRESHOLD SWING; THIN-FILM TRANSISTOR (TFTS); UNDER GATE;

THIN FILM TRANSISTORS;

EID: 84864240204 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4731257 Document Type: Article

Times cited : (19)

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