The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transistors

Applied Physics Letters

Volumn 100, Issue 22, 2012, Pages

  Huang, Sheng Yao ^a   Chang, Ting Chang ^a,b   Lin, Li Wei ^a   Yang, Man Chun ^a   Chen, Min Chen ^a   Jhu, Jhe Ciou ^a   Jian, Fu Yen ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LOWERING; BIAS STRESS; CAPACITANCE VOLTAGE MEASUREMENTS; DEGRADATION BEHAVIOR; DRAIN BIAS; GATE DRAIN; MECHANISM OF DEGRADATION; NON-UNIFORM TRAPPING; PHOTOEXCITED HOLES; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE SHIFTS;

DEGRADATION; THIN FILM TRANSISTORS; THIN FILMS;

DRAIN CURRENT;

EID: 84862121689     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4722787     Document Type: Article

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