SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 11, 2009, Pages

Electrical instability of a-In-Ga-Zn-O TFTs biased below accumulation threshold

(9) Stryakhilev, Denis a Park, Jin Seong a Lee, Jaeseob a Kim, Tae Woong a Pyo, Young Shin a Lee, Dong Bum a Kim, Eun Hyun a Jin, Dong Un a Mo, Yeon Gon a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION THRESHOLD; AM-OLED; AMOLEDS; CONSTANT CURRENT STRESS; ELECTRICAL INSTABILITY; ELECTRON ACCUMULATION; GATE-DIELECTRIC INTERFACES; LOW BIAS; ORGANIC LIGHT EMITTING DIODE DISPLAY; STRESS CONDITION;

AMORPHOUS FILMS; CHARGE TRAPPING; DRAIN CURRENT; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); INDIUM; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 70249130833 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3202383 Document Type: Article

Times cited : (10)

References (22)

1
- 0038136910
- Transparent electronics
- DOI 10.1126/science.1085276
- J. F. Wager, Science 0036-8075, 300, 1245 (2003). 10.1126/science.1085276 (Pubitemid 36618226)
- (2003) Science , vol.300 , Issue.5623 , pp. 1245-1246
- Wager, J.F.¹

2
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836, 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

3
- 36549069333
- 10.1889/1.2451545
- T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa, J. Soc. Inf. Disp., 15, 17 (2007). 10.1889/1.2451545
- (2007) J. Soc. Inf. Disp. , vol.15 , pp. 17
- Hirao, T.¹ Furuta, M.² Furuta, H.³ Matsuda, T.⁴ Hiramatsu, T.⁵ Hokari, H.⁶ Yoshida, M.⁷ Ishii, H.⁸ Kakegawa, M.⁹

4
- 54249133947
- 0031-8965,. 10.1002/pssa.200778910
- M. Ito, M. Kon, C. Miyazaki, N. Ikeda, M. Ishizaki, R. Matsubara, Y. Ugajin, and N. Sekine, Phys. Status Solidi A 0031-8965, 205, 1885 (2008). 10.1002/pssa.200778910
- (2008) Phys. Status Solidi A , vol.205 , pp. 1885
- Ito, M.¹ Kon, M.² Miyazaki, C.³ Ikeda, N.⁴ Ishizaki, M.⁵ Matsubara, R.⁶ Ugajin, Y.⁷ Sekine, N.⁸

5
- 55149104462
- Digest Tech. Papers 0003-966X,. 10.1889/1.3069591
- J. K. Jeong, J. H. Jeong, J. H. Choi, J. S. Im, S. H. Kim, H. W. Yang, K. N. Kang, K. S. Kim, T. K. Ahn, H. -J. Chung, SID Int. Symp. Digest Tech. Papers 0003-966X, 39, 1 (2008). 10.1889/1.3069591
- (2008) SID Int. Symp. , vol.39 , pp. 1
- Jeong, J.K.¹ Jeong, J.H.² Choi, J.H.³ Im, J.S.⁴ Kim, S.H.⁵ Yang, H.W.⁶ Kang, K.N.⁷ Kim, K.S.⁸ Ahn, T.K.⁹ Chung, H.-J.¹⁰

6
- 42649117785
- 0022-3093,. 10.1016/j.jnoncrysol.2007.10.105
- H. Q. Chiang, B. R. McFarlane, D. Hong, R. E. Presley, and J. F. Wager, J. Non-Cryst. Solids 0022-3093, 354, 2826 (2008). 10.1016/j.jnoncrysol.2007.10. 105
- (2008) J. Non-Cryst. Solids , vol.354 , pp. 2826
- Chiang, H.Q.¹ McFarlane, B.R.² Hong, D.³ Presley, R.E.⁴ Wager, J.F.⁵

7
- 27744604400
- Submitted.
- J. Lee, J. -S. Park, Y. S. Pyo, D. B. Lee, E. H. Kim, D. Stryakhilev, T. W. Kim, D. U. Jin, and Y. -G. Mo, Appl. Phys. Lett., Submitted.
- Appl. Phys. Lett.
- Lee, J.¹ Park, J.-S.² Pyo, Y.S.³ Lee, D.B.⁴ Kim, E.H.⁵ Stryakhilev, D.⁶ Kim, T.W.⁷ Jin, D.U.⁸ Mo, Y.-G.⁹

8
- 52949097961
- 0003-6951,. 10.1063/1.2990657
- J. K. Jeong, H. W. Yang, J. H. Jeong, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 93, 123508 (2008). 10.1063/1.2990657
- (2008) Appl. Phys. Lett. , vol.93 , pp. 123508
- Jeong, J.K.¹ Yang, H.W.² Jeong, J.H.³ Mo, Y.-G.⁴ Kim, H.D.⁵

9
- 38649085378
- Disorder, band offsets and dopability of transparent conducting oxides
- DOI 10.1016/j.tsf.2007.03.092, PII S0040609007004142
- J. Robertson, Thin Solid Films 0040-6090, 516, 1419 (2008). 10.1016/j.tsf.2007.03.092 (Pubitemid 351172381)
- (2008) Thin Solid Films , vol.516 , Issue.7 , pp. 1419-1425
- Robertson, J.¹

10
- 51349141239
- 0003-6951,. 10.1063/1.2977865
- J. -M. Lee, I. -T. Cho, J. -H. Lee, and H. -I. Kwon, Appl. Phys. Lett. 0003-6951, 93, 093504 (2008). 10.1063/1.2977865
- (2008) Appl. Phys. Lett. , vol.93 , pp. 093504
- Lee, J.-M.¹ Cho, I.-T.² Lee, J.-H.³ Kwon, H.-I.⁴

11
- 34248399209
- Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
- DOI 10.1063/1.2723543
- D. Kang, H. Lim, C. Kim, I. Song, J. Park, and Y. Park, Appl. Phys. Lett. 0003-6951, 90, 192101 (2007). 10.1063/1.2723543 (Pubitemid 46738090)
- (2007) Applied Physics Letters , vol.90 , Issue.19 , pp. 192101
- Kang, D.¹ Lim, H.² Kim, C.³ Song, I.⁴ Park, J.⁵ Park, Y.⁶ Chung, J.⁷

12
- 39749191514
- Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
- DOI 10.1063/1.2838380
- J. S. Park, J. K. Jeong, H. -J. Chung, Y. -G. Mo, and H. D. Kim, Appl. Phys. Lett. 0003-6951, 92, 072104 (2008). 10.1063/1.2838380 (Pubitemid 351304848)
- (2008) Applied Physics Letters , vol.92 , Issue.7 , pp. 072104
- Park, J.-S.¹ Jeong, J.K.² Chung, H.-J.³ Mo, Y.-G.⁴ Kim, H.D.⁵

13
- 37549040163
- 0003-6951,. 10.1063/1.2825422
- Y. Vygranenko, K. Wang, and A. Nathan, Appl. Phys. Lett. 0003-6951, 91, 263508 (2007). 10.1063/1.2825422
- (2007) Appl. Phys. Lett. , vol.91 , pp. 263508
- Vygranenko, Y.¹ Wang, K.² Nathan, A.³

14
- 54549085532
- Digest Tech. Papers 0003-966X,. 10.1889/1.3069739
- R. Hayashi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, SID Int. Symp. Digest Tech. Papers 0003-966X, 39, 621 (2008). 10.1889/1.3069739
- (2008) SID Int. Symp. , vol.39 , pp. 621
- Hayashi, R.¹ Sato, A.² Ofuji, M.³ Abe, K.⁴ Yabuta, H.⁵ Sano, M.⁶ Kumomi, H.⁷ Nomura, K.⁸ Kamiya, T.⁹ Hirano, M.¹⁰

15
- 0031210179
- 0013-4651,. 10.1149/1.1837903
- M. S. Shur, H. C. Slade, M. D. Jacunski, A. A. Owusu, and T. Ytterdal, J. Electrochem. Soc. 0013-4651, 144, 2833 (1997). 10.1149/1.1837903
- (1997) J. Electrochem. Soc. , vol.144 , pp. 2833
- Shur, M.S.¹ Slade, H.C.² Jacunski, M.D.³ Owusu, A.A.⁴ Ytterdal, T.⁵

16
- 0003756353
- R. A. Street, Editor, Cha, Springer, New York
- Technology and Applications of Amorphous Silicon, R. A. Street, Editor, Chap., Springer, New York (2000).
- (2000) Technology and Applications of Amorphous Silicon

17
- 48249117996
- 0003-6951,. 10.1063/1.2963978
- J. -S. Park, J. -K. Jeong, Y. -G. Mo, H. -D. Kim, and C. -J. Kim, Appl. Phys. Lett. 0003-6951, 93, 033513 (2008). 10.1063/1.2963978
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033513
- Park, J.-S.¹ Jeong, J.-K.² Mo, Y.-G.³ Kim, H.-D.⁴ Kim, C.-J.⁵

18
- 34247620347
- Flexible full-color AMOLED on ultrathin metal foil
- DOI 10.1109/LED.2007.895449
- J. K. Jeong, D. U. Jin, H. S. Shin, H. J. Lee, M. Kim, T. K. Ahn, J. Lee, Y. G. Mo, and H. K. Chung, IEEE Electron Device Lett. 0741-3106, 28, 389 (2007). 10.1109/LED.2007.895449 (Pubitemid 46667437)
- (2007) IEEE Electron Device Letters , vol.28 , Issue.5 , pp. 389-391
- Jeong, J.K.¹ Jin, D.U.² Shin, H.S.³ Lee, H.J.⁴ Kim, M.⁵ Ahn, T.K.⁶ Lee, J.⁷ Mo, Y.G.⁸ Chung, H.K.⁹

19
- 34548700847
- Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements
- DOI 10.1063/1.2783971
- M. R. Esmaeili-Rad, A. Sazonov, and A. Nathan, Appl. Phys. Lett. 0003-6951, 91, 113511 (2007). 10.1063/1.2783971 (Pubitemid 47416047)
- (2007) Applied Physics Letters , vol.91 , Issue.11 , pp. 113511
- Esmaeili-Rad, M.R.¹ Sazonov, A.² Nathan, A.³

20
- 0004047079
- Cha, Kluwer, Norwell, MA
- S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-on-Insulator Materials and Devices, Chap., Kluwer, Norwell, MA (1995).
- (1995) Electrical Characterization of Silicon-on-Insulator Materials and Devices
- Cristoloveanu, S.¹ Li, S.S.²

21
- 49749095157
- 0003-6951,. 10.1063/1.2967456
- H. Lim, H. Yin, J. -S. Park, I. Song, C. Kim, J. C. Park, S. I. Kim, S. -W. Kim, C. B. Lee, Y. C. Kim, Appl. Phys. Lett. 0003-6951, 93, 063505 (2008). 10.1063/1.2967456
- (2008) Appl. Phys. Lett. , vol.93 , pp. 063505
- Lim, H.¹ Yin, H.² Park, J.-S.³ Song, I.⁴ Kim, C.⁵ Park, J.C.⁶ Kim, S.I.⁷ Kim, S.-W.⁸ Lee, C.B.⁹ Kim, Y.C.¹⁰

22
- 38349125119
- 1099-0062,. 10.1149/1.2826332
- H. -J. Chung, J. H. Jeong, T. K. Ahn, H. J. Lee, M. Kim, K. Jun, J. -S. Park, J. K. Jeong, Y. -G. Mo, and H. D. Kim, Electrochem. Solid-State Lett. 1099-0062, 11, H51 (2008). 10.1149/1.2826332
- (2008) Electrochem. Solid-State Lett. , vol.11 , pp. 51
- Chung, H.-J.¹ Jeong, J.H.² Ahn, T.K.³ Lee, H.J.⁴ Kim, M.⁵ Jun, K.⁶ Park, J.-S.⁷ Jeong, J.K.⁸ Mo, Y.-G.⁹ Kim, H.D.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.