Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors

Applied Physics Letters

Volumn 77, Issue 4, 2000, Pages 576-578

  Pichon, L ^a   Mercha, A ^a   Carin, R ^a   Bonnaud, O ^b   Mohammed Brahim, T ^b   Helen, Y ^b   Rogel, R ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0348245819     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127049     Document Type: Article

References (5)

1. T. Nogushi, A. J. Tang, J. A. Tsai, and R. Reif, IEEE Trans. Electron Devices 43, 1454 (1996).
2. Y. Helen, K. Mourgues, F. Raoult, T. Mohammed-Brahim, O. Bonnaud, R. Rogel, S. Prochasson, P. Boher, and D. Zahorski, Thin Solid Films 337, 133 (1999).
3. L. Pichon, F. Raoult, K. Mourgues, K. Kis-Sion, T. Mohammed-Brahim, and O. Bonnaud, Thin Solid Films 296, 133 (1997).
4. K. Mourgues, F. Raoult, L. Pichon, T. Mohammed-Brahim, D. Briand, and O. Bonnaud, Mater. Res. Soc. Symp. Proc. 471, 155 (1997).
5. L. Pichon, A. Mercha, R. Carin, Y. Helen, K. Mourgues, F. Raoult, T. Mohammed-Brahim, and O. Bonnaud, ESSDERC'99 Proceedings, éditions frontières (1999), p. 700.