Investigating the drain-bias-induced degradation behavior under light illumination for InGaZnO thin-film transistors

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1000-1002

  Hsieh, Tien Yu ^a   Chang, Ting Chang ^a   Chen, Te Chih ^a   Tsai, Ming Yen ^b   Chen, Yu Te ^b   Jian, Fu Yen ^a   Chung, Yi Chen ^c   Ting, Hung Che ^c   Chen, Chia Yu ^c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Bias stress; indium gallium zinc oxide (IGZO); light illumination; thin film transistors (TFTs)

Indexed keywords

BARRIER LOWERING; BIAS STRESS; C-V CURVE; CAPACITANCE VOLTAGE; DEGRADATION BEHAVIOR; DEVICE CHARACTERISTICS; INDIUM GALLIUM ZINC OXIDES; LIGHT ILLUMINATION; NEGATIVE SHIFT; THIN-FILM TRANSISTOR (TFTS); TRANSFER CURVES;

DEGRADATION;

THIN FILM TRANSISTORS;

EID: 84862875389     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2193112     Document Type: Article

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