Below threshold conduction in a-Si:H thin film transistors with and without a silicon nitride passivating layer

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2560-2562

  Slade, H C ^a,b   Shur, M S ^a   Deane, S C ^c   Hack, M ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d dpix   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042998197     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117739     Document Type: Article

References (10)

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2. M. Hack, Proceedings of the First Symposium on Thin Film Transistor Technologies, Toronto, Canada, edited by Y. Kuo (Electrochem. Soc. Inc., Pennington, NJ, 1992), pp. 44-58, Vol. 70.
3. M. Hack, H. Steemers, and R. Weisfield, Mater. Res. Soc. Symp. Proc. 258, 949 (1992).
4. M. J. Powell and J. Pritchard, J. Appl. Phys. 54, 3244 (1983).
5. G. E. Possin, Mater. Res. Soc. Symp. Proc. 219, 327 (1991).
6. R. E. I. Schropp, J. Snijder, and J. F. Verwey, J. Appl. Phys. 60, 643 (1986).
7. T. Globus, H. C. Slade, M. S. Shur, and M. Hack, Mater. Res. Soc. Symp. Proc. 336, 823 (1994).
8. P. N. Morgan, Ph.D. dissertation, Cambridge University, 1994.
9. M. J. Powell, C. van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, Phys. Rev. B 45, 4160 (1992).
10. Dawn Technologies Inc., 491 Macara Avenue, Suite 1002, Sunnyvale, California.