SCOPUS 정보 검색 플랫폼

Volumn 99, Issue 6, 2011, Pages

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

(6) Kim, Bosul a,b Chong, Eugene a,b Hyung Kim, Do a,c Woo Jeon, Yong d Hwan Kim, Dae e Yeol Lee, Sang a,b

a Korea Institute of Science and Technology (South Korea)

b University of Science and Technology (UST) (South Korea)

c Dongguk University (South Korea)

d Samsung Advanced Institute of Technology (SAIT) (South Korea)

e Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; DENSITY OF STATE; DEPTH PROFILE; DIFFERENT EFFECTS; GATE INSULATOR; GROWTH STAGES; INTERFACIAL TRAPS; RF-POWER; TEMPERATURE STRESS; TEMPERATURE-INDUCED; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS FILMS; BINDING ENERGY; PHOTOELECTRON SPECTROSCOPY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

THRESHOLD VOLTAGE;

EID: 84860415063 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3615304 Document Type: Article

Times cited : (57)

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