Suppress temperature instability of InGaZnO thin film transistors by N 2O plasma treatment, including thermal-induced hole trapping phenomenon under gate bias stress

Applied Physics Letters

Volumn 100, Issue 18, 2012, Pages

  Chang, Geng Wei ^a   Chang, Ting Chang ^b   Jhu, Jhe Ciou ^b   Tsai, Tsung Ming ^c   Syu, Yong En ^b   Chang, Kuan Chang ^c   Tai, Ya Hsiang ^a   Jian, Fu Yen ^b   Hung, Ya Chi ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; AMORPHOUS INGAZNO; BARRIER LOWERING; BIAS STRESS; DEFECTS GENERATION; DEPOSITION PROCESS; HIGH TEMPERATURE; HOLE TRAPPING; PLASMA TREATMENT; SOURCE REGION; STABILITY PERFORMANCE; SUB-THRESHOLD CURRENT; SUBTHRESHOLD LEAKAGE CURRENT; TEMPERATURE INSTABILITY; UNDER GATE;

DEFECTS; LEAKAGE CURRENTS; PLASMA APPLICATIONS; THIN FILM TRANSISTORS; THIN FILMS;

VAPOR DEPOSITION;

EID: 84862577180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4709417     Document Type: Article

References (16)

1. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 89, 112123 (2006). 10.1063/1.2353811
2. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature 432, 488-492 (2004). 10.1038/nature03090
3. Y. C. Chen, T. C. Chang, H. W. Li, S. C. Chen, J. Lu, W. F. Chung, Y. H. Tai, and T. Y. Tseng, Appl. Phys. Lett. 96, 262104 (2010). 10.1063/1.3457996
4. T. C. Chen, T. C. Chang, T. Y. Hsieh, C. T. Tsai, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen, Appl. Phys. Lett. 97, 192103 (2010). 10.1063/1.3514251
5. W. F. Chung, T. C. Chang, H. W. Li, S. C. Chen, Y. C. Chen, T. Y. Tseng, and Y. H. Tai, Appl. Phys. Lett. 98, 152109 (2011). 10.1063/1.3580614
6. S. Y. Huang, T. C. Chang, M. C. Chen, S. C. Chen, C. T. Tsai, M. C. Hung, C. H. Tu, C. H. Chen, J. J. Chang, and W. L. Liau, Electrochem. Solid State Lett. 14 (4), H177-H179 (2011). 10.1149/1.3534828
7. G. W. Chang, T. C. Chang, Y. E. Syu, T. M. Tsai, K. C. Chang, C. H. Tu, F. Y. Jian, Y. C. Hung, and Y. H. Tai, Thin Solid Films, 520, 1608-1611 (2011). 10.1016/j.tsf.2011.08.104
8. T. C. Chen, T. C. Chang, C. T. Tsai, T. Y. Hsieh, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen, Appl. Phys. Lett. 97, 112104 (2010). 10.1063/1.3481676
9. T. C. Chen, T. C. Chang, T. Y. Hsieh, W. S. Lu, F. Y. Jian, C. T. Tsai, S. Y. Huang, and C. S. Lin, Appl. Phys. Lett. 99, 022104 (2011). 10.1063/1.3609873
10. P. Kofstad, J. Phys. Chem. Solids. 23, 1571 (1962). 10.1016/0022-3697(62) 90239-1
11. P. Bonasewicz, W. Hirschwald, and G. Neumann, Phys. Status Solidi. 97, 593 (1986). 10.1002/pssa.2210970234
12. V. Gavryushin, G. Raciukaitis, D. Juodzbalis, A. Kazlauskas, and V. Kubertavicius, J. Cryst. Growth 138, 924 (1994). 10.1016/0022-0248(94)90933-4
13. K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, J. Appl. Phys. 48, 011301 (2009). 10.1143/JJAP.48.011301
14. H. Ohara, T. Sasaki, K. Noda, S. Ito, M. Sasaki, Y. Endo, S. Yoshitomi, J. Sakata, T. Serikawa, and S. Yamazaki, Jpn. J. Appl. Phys. Lett. 49, 03CD02 (2010). 10.1143/JJAP.49.03CD02
15. J. Park, S. Kim, C. Kim, S. Kim, I. Song, H. Yin, K. Kim, S. Lee, K. Hong, J. Lee, J. Jung, E. Lee, K. W. Kwon, and Y. Park, Appl. Phys. Lett. 93, 053505 (2008). 10.1063/1.2962985
16. T. Y. Hsieh, T. C. Chang, T. C. Chen, M. Y. Tsai, W. H. Lu, S. C. Chen, F. Y. Jian, and C. S. Lin, Thin Solid Films 520, 1427-1431 (2011). 10.1016/j.tsf.2011.10.002