Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions

Nature Communications

Volumn 2, Issue 1, 2011, Pages

  Paisley, Elizabeth A ^a   Losego, Mark D ^a   Gaddy, Benjamin E ^a   Tweedie, James S ^a   Collazo, Ramón ^a   Sitar, Zlatko ^a   Irving, Douglas L ^a   Maria, Jon Paul ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM OXIDE; GALLIUM; GALLIUM NITRIDE; OXYGEN; SURFACTANT; UNCLASSIFIED DRUG;

ARTICLE; CHEMICAL ENVIRONMENT; CHEMICAL PHENOMENA; CRYSTAL; DENSITY FUNCTIONAL THEORY; EPITAXY; FILM; MATERIALS; MORPHOLOGY; PREDICTION; REACTION ANALYSIS; SYNTHESIS; TEMPERATURE DEPENDENCE; WATER VAPOR;

EID: 80052610052     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms1470     Document Type: Article

References (50)

1. Cen, C., Thiel, S., Mannhart, J. & Levy, J. Oxide nanoelectronics on demand. Science 323, 1026-1030 (2009).
2. Chu, Y. H. et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nat. Mater. 7, 678 (2008).
3. Springholz, G., Holy, V., Pinczolits, M. & Bauer, G. Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant. Science 282, 734-737 (1998).
4. Malin, L., Stolichnov, I. & Setter, N. Ferroelectric polymer gate on AlGaN/GaN heterostructures. J. Appl. Phys. 102, Article number 1114101 (2007).
5. Murray, E. D. & Vanderbilt, D. Theoretical investigation of polarization-compensated II-IV/I-V perovskite superlattices. Phys. Rev. B 79, Article number 100102 (2009).
6. Schmehl, A. et al. Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN. Nat. Mater. 6, 882-887 (2007).
7. Thomas, R., Scott, J. F., Bose, D. N. & Katiyar, R. S. Multiferroic thin-film integration onto semiconductor devices. J. Phys. Condens. Mat. 22, Article number 423201 (2010).
8. Zavaliche, F. et al. Electric field-induced magnetization switching in epitaxial columnar nanostructures. Nano Lett. 5, 1793-1796 (2005).
9. Craft, H. S. et al. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy. Appl. Phys. Lett. 88, Article number 212906 (2006).
10. Gila, B. P. Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma. J. Vac. Sci. Technol. B 21, 2368-2370 (2003).
11. Mei, Z. X. et al. Two-step growth of MgO films on sapphire (0001) substrates by radio frequency plasma-assisted molecular beam epitaxy. Chinese Phys. Lett. 21, 410-413 (2004).
12. Losego, M. D. et al. Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces. J. Cryst. Growth 311, 1106-1109 (2009).
13. Tian, W. et al. Epitaxial integration of (0001) BiFeO3 with (0001) GaN. Appl. Phys. Lett. 90, Article number 172908 (2007).
14. Barin, I. Thermochemical Data of Pure Substances (VCH: Weinheim, 1995), pp. 1885.
15. Kandel, D. & Kaxiras, E. Surfactant-mediated crystal-growth of semiconductors. Phys. Rev. Lett. 75, 2742-2745 (1995).
16. Collazo, R., Mita, S., Aleksov, A., Schlesser, R. & Sitar, Z. Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers. J. Cryst. Growth 287, 586-590 (2006).
17. Neave, J. H., Joyce, B. A., Dobson, P. J. & Norton, N. Dynamics of film growth of gaas by Mbe from rheed observations. Appl. Phys A-Mater. 31, 1-8 (1983).
18. Tersoff, J., Phang, Y. H., Zhang, Z. Y. & Lagally, M. G. Step-bunching instability of vicinal surfaces under stress. Phys. Rev. Lett. 75, 2730-2733 (1995).
19. Prabhakaran, K., Andersson, T. G. & Nozawa, K. Nature of native oxide on GaN surface and its reaction with Al. Appl. Phys. Lett. 69, 3212-3214 (1996).
20. Liu, P., Kendelewicz, T., Brown, G. E., Parks, G. A. & Pianetta, P. Reaction of water with vacuum-cleaved CaO(100) surfaces: An X-ray photoemission spectroscopy study. Surf. Sci. 416, 326-340 (1998).
21. Hacquart, R. & Jupille, J. Hydrated MgO smoke crystals from cubes to octahedra. Chem. Phys. Lett. 439, 91-94 (2007).
22. Refson, K. et al. Water chemisorption and reconstruction of the Mgo surface. Phys. Rev. B 52, 10823-10826 (1995).
23. Hacquart, R. & Jupille, J. Morphology of MgO smoke crystallites upon etching in wet environment. J. Cryst. Growth. 311, 4598-4604 (2009).
24. Copel, M., Reuter, M., Vonhoegen, M. & Tromp, R. Influence of surfactants in Ge and Si epitaxy on Si (001). Phys. Rev. B. 42, 11682-11689 (1990).
25. Posadas, A. et al. Epitaxial growth of multiferroic YMnO3 on GaN. Appl. Phys. Lett. 87, Article number 171915 (2005).
26. Hansen, P. J. et al. Rutile films grown by molecular beam epitaxy on GaN and AlGaN/GaN. J. Vac. Sci. Technol. B 23, 499-506 (2005).
27. Reuter, K. & Scheffler, M. Composition, structure, and stability of RuO2(110) as a function of oxygen pressure. Phys. Rev. B 65, Aritcle number 035406 (2002).
28. Sun, Q., Reuter, K. & Scheffler, M. Effect of a humid environment on the surface structure of RuO2(110). Phys. Rev. B 67, Article number 205424 (2003).
29. Payne, M. C., Teter, M. P., Allan, D. C., Arias, T. A. & Joannopoulos, J. D. Iterative minimization techniques for abinitio total-energy calculations-molecular-dynamics and conjugate gradients. Rev. Mod. Phys. 64, 1045-1097 (1992).
30. Jones, R. O. & Gunnarsson, O. The density functional formalism, its applications and prospects. Rev. Mod. Phys. 61, 689-746 (1989).
31. de Leeuw, N. H. & Parker, S. C. Computer simulation of dissociative adsorption of water on CaO and MgO surfaces and the relation to dissolution. Res. Chem. Intermediat. 25, 195-211 (1999).
32. de Leeuw, N. H. & Purton, J. A. Density-functional theory calculations of the interaction of protons and water with low-coordinated surface sites of calcium oxide. Phys. Rev. B 6319, Article number 195417 (2001).
33. de Leeuw, N. H., Purton, J. A., Parker, S. C., Watson, G. W. & Kresse, G. Density functional theory calculations of adsorption of water at calcium oxide and calcium fluoride surfaces. Surf. Sci. 452, 9-19 (2000).
34. Ciston, J., Subramanian, A. & Marks, L. D. Water-driven structural evolution of the polar MgO (111) surface: An integrated experimental and theoretical approach. Phys. Rev. B 79, Article number 085421 (2009).
35. Gay, I. D. & Harrison, N. M. A density functional study of water and methanol chemisorption on MgO(110). Surf. Sci. 591, 13-22 (2005).
36. Geysermans, P., Finocchi, F., Goniakowski, J., Hacquart, R. & Jupille, J. Combination of (100), (110) and (111) facets in MgO crystals shapes from dry to wet environment. Phys. Chem. Chem. Phys. 11, 2228-2233 (2009).
37. Jug, K., Heidberg, B. & Bredow, T. Cyclic cluster study of water adsorption structures on the MgO(100) surface. Surf. Sci. 601, 1529-1535 (2007).
38. Scamehorn, C. A., Hess, A. C. & Mccarthy, M. I. Correlation corrected periodic hartree-fock study of the interactions between water and the (001) magnesium-oxide surface. J. Chem. Phys. 99, 2786-2795 (1993).
39. Theis, C. D. & Schlom, D. G. Epitaxial lead titanate grown by MBE. J. Cryst. Growth 174, 473-479 (1997).
40. Gila, B. P. et al. Novel dielectrics for gate oxides and surface passivation on GaN. Solid State Electron. 50, 1016-1023 (2006).
41. Craft, H. S. et al. Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface. Appl. Phys. Lett. 92, Article number 082907 (2008).
42. Kumar, V. & Grupta, A. K. Design and performance of a simple heater for in situ deposition of high-Tc superconducting thin films. Meas. Sci. Technol. 4, 790-792 (1993).
43. Kraisinger, C. J., Fusina, D. M. & Schlom, D. G. Computer simulation, design, and characterization of a nozzle for more effective delivery of oxidizing-gases. Mater. Res. Soc. Symp. P. 401, 387-392 (1996).
44. Kresse, G. & Furthmuller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
45. Kresse, G. & Furthmuller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comp. Mater. Sci. 6, 15 (1996).
46. Kresse, G. & Hafner, J. Abinitio molecular-dynamics for liquid-metals. Phys. Rev. B 47, 558-561 (1993).
47. Kresse, G. & Hafner, J. Ab-Initio molecular-dynamics simulation of the liquid-metal amorphous-semiconductor transition in germanium. Phys. Rev. B 49, 14251-14269 (1994).
48. Perdew, J. P. et al. Restoring the density-gradient expansion for exchange in solids and surfaces. Phys. Rev. Lett. 100, Article number 136406 (2008).
49. Perdew, J. P., Burke, K. & Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865-3868 (1996).
50. Stull, D. R. and Prophet, H. in JANAF Thermichemical Tables 2nd edn, vol. 37, 1141 (NSRDS-NBS, 1971).