Mechanism of PEALD-Grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 193-195

  Huang, Sen ^a,b   Jiang, Qimeng ^a   Yang, Shu ^a   Tang, Zhikai ^a   Chen, Kevin J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

AlGaN GaN HEMTs; AlN; passivation; physical mechanism; plasma enhanced atomic layer deposition; polarization

Indexed keywords

ALGAN/GAN HEMTS; ALN; ALN THIN FILMS; C-V CHARACTERIZATION; C-V MEASUREMENT; CAPACITANCE VOLTAGE; CURRENT COLLAPSE; DIELECTRIC STACK; EFFECTIVE SUPPRESSION; FIXED CHARGES; INTERFACE TRAPS; METAL-INSULATOR-SEMICONDUCTOR DIODES; MIS DIODES; NEGATIVE BIAS; PHYSICAL MECHANISM; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLARIZATION CHARGES; QUASI-STATIC; VERTICAL LEAKAGE;

ELECTRIC CURRENT MEASUREMENT; ELECTRON GAS; MIS DEVICES; PASSIVATION; POLARIZATION; THIN FILMS;

GALLIUM NITRIDE;

EID: 84873056518     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2229106     Document Type: Article

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