SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 154, Issue 2, 2007, Pages

Studies of Interface States in Sc2 O3 GaN, MgOGaN, and MgScOGaN structures

(7) Polyakov, A Y a Smirnov, N B a Gila, B P b Hlad, M b Gerger, A P b Abernathy, C R b Pearton, S J b

a INSTITUTE OF RARE METALS (Russian Federation)

b UNIVERSITY OF FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTROCHEMISTRY; GALLIUM NITRIDE; INTERFACES (MATERIALS); MAGNESIUM COMPOUNDS;

ADDITIONAL INTERFACE TRAPS; INTERFACE TRAP DENSITIES; METAL INSULATOR SEMICONDUCTOR STRUCTURES; NEGATIVE BIAS;

SCANDIUM COMPOUNDS;

EID: 33846235975 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2405865 Document Type: Article

Times cited : (22)

References (25)

1
- 0033738001
- B. M. Green, K. K. Chu, E. M. Chumbes, J. A. Smart, J. R. Shealy, and L. F. Eastman, IEEE Electron Device Lett., 21, 268 (2000).
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 268
- Green B., M.¹ Chu K., K.² Chumbes E., M.³ Smart J., A.⁴ Shealy J., R.⁵ Eastman L., F.⁶

2
- 0034318117
- G. Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. Asif Khan, R. Gaska, and M. S. Shur, Electron. Lett., 36, 2043 (2000).
- (2000) Electron. Lett. , vol.36 , pp. 2043
- Simin, G.¹ Hu, X.² Ilinskaya, N.³ Kumar, A.⁴ Koudymov, A.⁵ Zhang, J.⁶ Asif Khan, M.⁷ Gaska, R.⁸ Shur M., S.⁹

3
- 0035250448
- I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U. K. Mishra, I. P. Smorchkova, S. Keller, C. Nguyen, and E. Kohn, IEEE Electron Device Lett., 22, 62 (2001).
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 62
- Daumiller, I.¹ Theron, D.² Gaquiere, C.³ Vescan, A.⁴ Dietrich, R.⁵ Wieszt, A.⁶ Leier, H.⁷ Vetury, R.⁸ Mishra U., K.⁹ Smorchkova I., P.¹⁰ Keller, S.¹¹ Nguyen, C.¹² Kohn, E.¹³

4
- 0035914883
- P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Appl. Phys. Lett., 79, 3527 (2001).
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3527
- Klein P., B.¹ Binari S., C.² Ikossi, K.³ Wickenden A., E.⁴ Koleske D., D.⁵ Henry R., L.⁶

5
- 0035278799
- S. C. Binari, K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, IEEE Trans. Electron Devices, 48, 465 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 465
- Binari S., C.¹ Ikossi, K.² Roussos J., A.³ Kruppa, W.⁴ Park, D.⁵ Dietrich H., B.⁶ Koleske D., D.⁷ Wickenden A., E.⁸ Henry R., L.⁹

6
- 0035279816
- L. F. Eastman, V. Tilak, J. Smart, B. M. Green, E. M. Chumbes, R. Dimitrov, H. Kim, O. S. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. J. Schaff, and J. R. Shealy, IEEE Trans. Electron Devices, 48, 479 (2001).
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 479
- Eastman L., F.¹ Tilak, V.² Smart, J.³ Green B., M.⁴ Chumbes E., M.⁵ Dimitrov, R.⁶ Kim, H.⁷ Ambacher O., S.⁸ Weimann, N.⁹ Prunty, T.¹⁰ Murphy, M.¹¹ Schaff W., J.¹² Shealy J., R.¹³

7
- 79955997504
- B. Luo, J. W. Johnson, J. Kim, R. M. Mehandru, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, A. G. Baca, R. D. Briggs, R. J. Shul, C. Monier, and J. Han, Appl. Phys. Lett., 80, 1661 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1661
- Luo, B.¹ Johnson J., W.² Kim, J.³ Mehandru R., M.⁴ Ren, F.⁵ Gila B., P.⁶ Onstine A., H.⁷ Abernathy C., R.⁸ Pearton S., J.⁹ Baca A., G.¹⁰ Briggs R., D.¹¹ Shul R., J.¹² Monier, C.¹³ Han, J.¹⁴

8
- 0038665178
- R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, J. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo, Appl. Phys. Lett., 82, 2530 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 2530
- Mehandru, R.¹ Luo, B.² Kim, J.³ Ren, F.⁴ Gila B., P.⁵ Onstine A., H.⁶ Abernathy C., R.⁷ Pearton S., J.⁸ Gotthold, D.⁹ Birkhahn, R.¹⁰ Peres, B.¹¹ Fitch, R.¹² Gillespie, J.¹³ Jenkins, T.¹⁴ Sewell, J.¹⁵ Via, D.¹⁶ Crespo, A.¹⁷

9
- 79956030912
- J. Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, and Y. Irokawa, Appl. Phys. Lett., 80, 4555 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 4555
- Kim, J.¹ Mehandru, R.² Luo, B.³ Ren, F.⁴ Gila B., P.⁵ Onstine A., H.⁶ Abernathy C., R.⁷ Pearton S., J.⁸ Irokawa, Y.⁹

10
- 79956037844
- J. Kim, R. Mehandru, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, and Y. Irokawa, Appl. Phys. Lett., 81, 373 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 373
- Kim, J.¹ Mehandru, R.² Luo, B.³ Ren, F.⁴ Gila B., P.⁵ Onstine A., H.⁶ Abernathy C., R.⁷ Pearton S., J.⁸ Irokawa, Y.⁹

11
- 0142089023
- A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, V. N. Danilin, T. A. Zhukova, B. Luo, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 83, 2608 (2003).
- (2003) Appl. Phys. Lett. , vol.83 , pp. 2608
- Polyakov A., Y.¹ Smirnov N., B.² Govorkov A., V.³ Danilin V., N.⁴ Zhukova T., A.⁵ Luo, B.⁶ Ren, F.⁷ Gila B., P.⁸ Onstine A., H.⁹ Abernathy C., R.¹⁰ Pearton S., J.¹¹

12
- 31544461294
- J. -J. Chen, B. P. Gila, M. Hlad, A. Gerger, F. Ren, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 88, 042113 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 042113
- Chen J., -J.¹ Gila B., P.² Hlad, M.³ Gerger, A.⁴ Ren, F.⁵ Abernathy C., R.⁶ Pearton S., J.⁷

13
- 0942300088
- B. P. Gila, A. H. Onstine, J. Kim, K. K. Allums, F. Ren, C. R. Abernathy, and S. J. Peaton, J. Vac. Sci. Technol. B, 21, 2368 (2003).
- (2003) J. Vac. Sci. Technol. B , vol.21 , pp. 2368
- Gila B., P.¹ Onstine A., H.² Kim, J.³ Allums K., K.⁴ Ren, F.⁵ Abernathy C., R.⁶ Peaton S., J.⁷

14
- 4243135856
- B. P. Gila, C. R. Abernathy, and F. Ren, Mater. Sci. Eng., R. 44, 151 (2004).
- (2004) Mater. Sci. Eng., R. , vol.44 , pp. 151
- Gila B., P.¹ Abernathy C., R.² Ren, F.³

15
- 33646679179
- J. J. Chen, B. P. Gila, M. Hlad, A. Gerger, F. Ren, C. R. Abernathy, and S. J. Pearton, Appl. Phys. Lett., 88, 142115 (2006).
- (2006) Appl. Phys. Lett. , vol.88 , pp. 142115
- Chen J., J.¹ Gila B., P.² Hlad, M.³ Gerger, A.⁴ Ren, F.⁵ Abernathy C., R.⁶ Pearton S., J.⁷

16
- 28344452222
- B. P. Gila, M. Hlad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. J. Pearton, T. Anderson, S. Jang, F. Ren, N. Moser, R. C. Fitch, and M. Freund, Appl. Phys. Lett. 87, 163503 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 163503
- Gila B., P.¹ Hlad, M.² Onstine A., H.³ Frazier, R.⁴ Thaler G., T.⁵ Herrero, A.⁶ Lambers, E.⁷ Abernathy C., R.⁸ Pearton S., J.⁹ Anderson, T.¹⁰ Jang, S.¹¹ Ren, F.¹² Moser, N.¹³ Fitch R., C.¹⁴ Freund, M.¹⁵

17
- 0000801450
- E. H. Nicollian and A. Goetzberger, Appl. Phys. Lett., 7, 216 (1965).
- (1965) Appl. Phys. Lett. , vol.7 , pp. 216
- Nicollian E., H.¹ Goetzberger, A.²

18
- 0018291344
- K. Yamasaki, M. Yoshida, and T. Sugano, Jpn. J. Appl. Phys., 18, 113 (1979).
- (1979) Jpn. J. Appl. Phys. , vol.18 , pp. 113
- Yamasaki, K.¹ Yoshida, M.² Sugano, T.³

19
- 0003514835
- G.Barbottin and A.Vapaille, Editors, Elsevier Science Publishers, Amsterdam
- E. Klausmann in Instabilities in Silicon Devices, Vol. 2, Chap., G. Barbottin, and, A. Vapaille, Editors, Elsevier Science Publishers, Amsterdam (1989).
- (1989) Instabilities in Silicon Devices , vol.2
- Klausmann, E.¹

20
- 0017005446
- K. I. Wang and A. O. Evwaraye, J. Appl. Phys. 47, 4574 (1976).
- (1976) J. Appl. Phys. , vol.47 , pp. 4574
- Wang K., I.¹ Evwaraye A., O.²

21
- 0017928266
- M. Schulz and N. M. Johnson, Solid State Commun., 25, 481 (1978).
- (1978) Solid State Commun. , vol.25 , pp. 481
- Schulz, M.¹ Johnson N., M.²

22
- 0021422050
- W. D. Eades and R. M. Swanson, Appl. Phys. Lett., 44, 988 (1984).
- (1984) Appl. Phys. Lett. , vol.44 , pp. 988
- Eades W., D.¹ Swanson R., M.²

23
- 0020821759
- O. Engstrom and A. Alm, J. Appl. Phys., 54, 5240 (1983).
- (1983) J. Appl. Phys. , vol.54 , pp. 5240
- Engstrom, O.¹ Alm, A.²

24
- 33846232526
- O. Engstrom and M. S. Shivaraman, J. Appl. Phys., 58, 3929 (1985).
- (1985) J. Appl. Phys. , vol.58 , pp. 3929
- Engstrom, O.¹ Shivaraman M., S.²

25
- 20744449531
- D. C. Look, J. Cryst. Growth, 281, 143 (2005).
- (2005) J. Cryst. Growth , vol.281 , pp. 143
- Look D., C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.