Nucleation-controlled gold-induced-crystallization for selective formation of Ge(100) and (111) on insulator at low-temperature (∼250 °c)

Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

  Park, Jong Hyeok ^a,b   Suzuki, Tsuneharu ^a   Kurosawa, Masashi ^a,b,c   Miyao, Masanobu ^a   Sadoh, Taizoh ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GE(100); GE(111); LARGE-GRAIN; LOW TEMPERATURES; SELECTIVE FORMATION;

ALUMINUM; FLEXIBLE ELECTRONICS; GERMANIUM; GOLD; NUCLEATION;

INTERFACES (MATERIALS);

EID: 84883329778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819015     Document Type: Article

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