SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 101, Issue 7, 2012, Pages

Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization

(7) Toko, K a Kurosawa, M b Saitoh, N c Yoshizawa, N c Usami, N d Miyao, M b Suemasu, T a

a UNIVERSITY OF TSUKUBA (Japan)

b KYUSHU UNIVERSITY (Japan)

c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

d TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CONTROLLING PROCESS; GE ON INSULATORS; GE SURFACES; GE THIN FILMS; HIGH QUALITY; LOW TEMPERATURE ANNEALING; PHOTOVOLTAIC APPLICATIONS;

ALUMINUM; AMORPHOUS FILMS; FUNCTIONAL MATERIALS; SURFACE DEFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 84865405725 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4744962 Document Type: Article

Times cited : (97)

References (22)

1
- 33750919479
- Low-temperature formation (<500 °c) of poly-Ge thin-film transistor with NiGe Schottky source/drain
- DOI 10.1063/1.2387136
- T. Sadoh, H. Kamizuru, A. Kenjo, and M. Miyao, Appl. Phys. Lett. 89, 192114 (2006). 10.1063/1.2387136 (Pubitemid 44729696)
- (2006) Applied Physics Letters , vol.89 , Issue.19 , pp. 192114
- Sadoh, T.¹ Kamizuru, H.² Kenjo, A.³ Miyao, M.⁴

2
- 67349160420
- 10.1016/j.apsusc.2009.03.035
- C. Y. Tsao, J. W. Weber, P. Campbell, P. I. Widenborg, D. Song, and M. A. Green, Appl. Surf. Sci. 255, 7028 (2009). 10.1016/j.apsusc.2009.03.035
- (2009) Appl. Surf. Sci. , vol.255 , pp. 7028
- Tsao, C.Y.¹ Weber, J.W.² Campbell, P.³ Widenborg, P.I.⁴ Song, D.⁵ Green, M.A.⁶

3
- 77955206033
- 10.1038/nphoton.2010.157
- J. Michel, J. Liu, and L. C. Kimerling, Nature Photon. 4, 527 (2010). 10.1038/nphoton.2010.157
- (2010) Nature Photon. , vol.4 , pp. 527
- Michel, J.¹ Liu, J.² Kimerling, L.C.³

4
- 79958792437
- 10.1143/APEX.4.064201
- T. Nishimura, C. H. Lee, T. Tabata, S. K. Wang, K. Nagashio, K. Kita, and A. Toriumi, Appl. Phys. Express 4, 064201 (2011). 10.1143/APEX.4.064201
- (2011) Appl. Phys. Express , vol.4 , pp. 064201
- Nishimura, T.¹ Lee, C.H.² Tabata, T.³ Wang, S.K.⁴ Nagashio, K.⁵ Kita, K.⁶ Toriumi, A.⁷

5
- 77955539801
- 10.1021/nn100734e
- N. Fukata, K. Sato, M. Mitome, Y. Bando, T. Sekiguchi, M. Kirkham, J. I. Hong, Z. L. Wang, and R. L. Snyder, ACS Nano 4, 3807 (2010). 10.1021/nn100734e
- (2010) ACS Nano , vol.4 , pp. 3807
- Fukata, N.¹ Sato, K.² Mitome, M.³ Bando, Y.⁴ Sekiguchi, T.⁵ Kirkham, M.⁶ Hong, J.I.⁷ Wang, Z.L.⁸ Snyder, R.L.⁹

6
- 64649105335
- 10.1103/PhysRevLett.102.137204
- K. Hamaya, H. Itoh, O. Nakatsuka, K. Ueda, K. Yamamoto, M. Itakura, T. Taniyama, T. Ono, and M. Miyao, Phys. Rev. Lett. 102, 137204 (2009). 10.1103/PhysRevLett.102.137204
- (2009) Phys. Rev. Lett. , vol.102 , pp. 137204
- Hamaya, K.¹ Itoh, H.² Nakatsuka, O.³ Ueda, K.⁴ Yamamoto, K.⁵ Itakura, M.⁶ Taniyama, T.⁷ Ono, T.⁸ Miyao, M.⁹

7
- 34948851463
- A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits
- DOI 10.1063/1.2793183
- J. H. Park, P. Kapur, K. C. Saraswat, and H. Peng, Appl. Phys. Lett. 91, 143107 (2007). 10.1063/1.2793183 (Pubitemid 47531550)
- (2007) Applied Physics Letters , vol.91 , Issue.14 , pp. 143107
- Park, J.-H.¹ Kapur, P.² Saraswat, K.C.³ Peng, H.⁴

8
- 51349168547
- 10.1063/1.2977965
- W. Yeh, H. Chen, H. Huang, C. Hsiao, and J. Jeng, Appl. Phys. Lett. 93, 094103 (2008). 10.1063/1.2977965
- (2008) Appl. Phys. Lett. , vol.93 , pp. 094103
- Yeh, W.¹ Chen, H.² Huang, H.³ Hsiao, C.⁴ Jeng, J.⁵

9
- 56749152013
- 10.1149/1.3008009
- M. Tada, J. H. Park, J. R. Jain, and K. C. Saraswat, J. Electrochem. Soc. 156, D23 (2009). 10.1149/1.3008009
- (2009) J. Electrochem. Soc. , vol.156 , pp. 23
- Tada, M.¹ Park, J.H.² Jain, J.R.³ Saraswat, K.C.⁴

10
- 0001761088
- Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature
- DOI 10.1063/1.122722, PII S0003695198011486
- O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham, Appl. Phys. Lett. 73, 3214 (1998). 10.1063/1.122722 (Pubitemid 128677358)
- (1998) Applied Physics Letters , vol.73 , Issue.22 , pp. 3214-3216
- Nast, O.¹ Puzzer, T.² Koschier, L.M.³ Sproul, A.B.⁴ Wenham, S.R.⁵

11
- 37149000922
- Mechanism of aluminum-induced layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers
- DOI 10.1063/1.2822275
- J. Y. Wang, Z. M. Wang, and E. J. Mittemeijer, J. Appl. Phys. 102, 113523 (2007). 10.1063/1.2822275 (Pubitemid 350262095)
- (2007) Journal of Applied Physics , vol.102 , Issue.11 , pp. 113523
- Wang, J.Y.¹ Wang, Z.M.² Mittemeijer, E.J.³

12
- 77953645667
- 10.1063/1.3431385
- A. Sarikov, J. Schneider, J. Berghold, M. Muske, I. Sieber, S. Gall, and W. Fuhs, J. Appl. Phys. 107, 114318 (2010). 10.1063/1.3431385
- (2010) J. Appl. Phys. , vol.107 , pp. 114318
- Sarikov, A.¹ Schneider, J.² Berghold, J.³ Muske, M.⁴ Sieber, I.⁵ Gall, S.⁶ Fuhs, W.⁷

13
- 70349653899
- 10.1063/1.3241076
- M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 95, 132103 (2009). 10.1063/1.3241076
- (2009) Appl. Phys. Lett. , vol.95 , pp. 132103
- Kurosawa, M.¹ Kawabata, N.² Sadoh, T.³ Miyao, M.⁴

14
- 77956752898
- 10.1143/APEX.3.095803
- M. Jung, A. Okada, T. Saito, T. Suemasu, and N. Usami, Appl. Phys. Express 3, 095803 (2010). 10.1143/APEX.3.095803
- (2010) Appl. Phys. Express , vol.3 , pp. 095803
- Jung, M.¹ Okada, A.² Saito, T.³ Suemasu, T.⁴ Usami, N.⁵

15
- 79955524774
- 10.1016/j.sse.2011.01.033
- M. Kurosawa, K. Toko, N. Kawabata, T. Sadoh, and M. Miyao, Solid-State Electron. 60, 7 (2011). 10.1016/j.sse.2011.01.033
- (2011) Solid-State Electron. , vol.60 , pp. 7
- Kurosawa, M.¹ Toko, K.² Kawabata, N.³ Sadoh, T.⁴ Miyao, M.⁵

16
- 45849142618
- 10.1016/j.tsf.2007.12.114
- I. Gordon, L. Carnel, D. Van Gestel, G. Beaucarne, and J. Poortmans, Thin Solid Films 516, 6984 (2008). 10.1016/j.tsf.2007.12.114
- (2008) Thin Solid Films , vol.516 , pp. 6984
- Gordon, I.¹ Carnel, L.² Van Gestel, D.³ Beaucarne, G.⁴ Poortmans, J.⁵

17
- 84862217019
- 10.1016/j.tsf.2012.05.009
- B. R. Wu, S. Y. Lo, D. S. Wuu, S. L. Ou, H. Y. Mao, J. H. Wang, and R. H. Horng, Thin Solid Films 520, 5860 (2012). 10.1016/j.tsf.2012.05.009
- (2012) Thin Solid Films , vol.520 , pp. 5860
- Wu, B.R.¹ Lo, S.Y.² Wuu, D.S.³ Ou, S.L.⁴ Mao, H.Y.⁵ Wang, J.H.⁶ Horng, R.H.⁷

18
- 84865431943
- x (0 x 1) films on insulating substrates, (in press) 10.1149/2.010203jss.
- x (0 x 1) films on insulating substrates, ECS J. Solid State Sci. Technol. (in press) 10.1149/2.010203jss.
- ECS J. Solid State Sci. Technol.
- Kurosawa, M.¹ Kawabata, N.² Sadoh, T.³ Miyao, M.⁴

19
- 77956214731
- 10.1063/1.3480600
- S. Hu, A. F. Marshall, and P. C. McIntyre, Appl. Phys. Lett. 97, 082104 (2010). 10.1063/1.3480600
- (2010) Appl. Phys. Lett. , vol.97 , pp. 082104
- Hu, S.¹ Marshall, A.F.² McIntyre, P.C.³

20
- 0018541470
- Crystallization in amorphous germanium
- DOI 10.1063/1.325855
- P. Germain, K. Zellama, S. Squelard, J. C. Bourgoin, and A. Gheorghiu, J. Appl. Phys. 50, 6986 (1979). 10.1063/1.325855 (Pubitemid 11420616)
- (1979) Journal of Applied Physics , vol.50 , Issue.11 PART 1 , pp. 6986-6994
- Germain, P.¹ Zellama, K.² Squelard, S.³ Bourgoin, J.C.⁴ Gheorghiu, A.⁵

21
- 0037087924
- 10.1103/PhysRevB.65.115318
- A. A. Stekolnikov, J. Furthmuller, and F. Bechstedt, Phys. Rev. B 65, 115318 (2002). 10.1103/PhysRevB.65.115318
- (2002) Phys. Rev. B , vol.65 , pp. 115318
- Stekolnikov, A.A.¹ Furthmuller, J.² Bechstedt, F.³

22
- 0004005306
- 2nd ed. (Wiley, New York), Cha
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap., p. 11.
- (1981) Physics of Semiconductor Devices , pp. 11
- Sze, S.M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.