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Japanese Journal of Applied Physics

Volumn 48, Issue 3 PART 3, 2009, Pages

Interfacial-oxide layer controlled Al-induced crystallization of Si 1-xGex (x: 0-1) on insulating substrate

(4) Kurosawa, Masashi a Tsumura, Yoshitaka a Sadoh, Taizoh a Miyao, Masanobu a

a KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR EXPOSURE; AMORPHOUS SI; ANNEALING TIME; GE FRACTION; INDUCED CRYSTALLIZATION; INSULATING SUBSTRATES; INTERFACIAL OXIDE LAYERS; INTERFACIAL OXIDES; LARGE-GRAIN; LAYER EXCHANGE; LOW TEMPERATURES; OXIDE LAYER; POLYCRYSTALLINE-SI; QUALITATIVE MODEL;

ALUMINUM; CRYSTALLIZATION; GERMANIUM; POLYSILICON;

AMORPHOUS SILICON;

EID: 77952502968 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.03B002 Document Type: Article

Times cited : (36)

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