Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices

Thin Solid Films

Volumn 520, Issue 8, 2012, Pages 3293-3295

  Park, Jong Hyeok ^a   Kurosawa, Masashi ^a,b   Kawabata, Naoyuki ^a   Miyao, Masanobu ^a   Sadoh, Taizoh ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

Author keywords

Au induced crystallization; SiGe; System in display; Thin film solar cell

Indexed keywords

FLEXIBLE DEVICE; GE FRACTION; GE-SEGREGATION; INSULATING SUBSTRATES; LAYER EXCHANGE; LOW TEMPERATURES; LOW-TEMPERATURE CRYSTALLIZATION; PLASTIC SUBSTRATES; POLY-SIGE; SIGE; STACKED STRUCTURE; SYSTEM-IN-DISPLAY; THIN-FILM SOLAR CELL;

SILICON; SILICON ALLOYS; TEMPERATURE;

GERMANIUM;

EID: 84857056164     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.087     Document Type: Conference Paper

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