Low-temperature formation (<500 °c) of poly-Ge thin-film transistor with NiGe Schottky source/drain

Applied Physics Letters

Volumn 89, Issue 19, 2006, Pages

  Sadoh, T ^a   Kamizuru, H ^a   Kenjo, A ^a   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; GLASS TRANSITION; LEAKAGE CURRENTS; NICKEL COMPOUNDS; SEMICONDUCTING GERMANIUM;

ANNEALING TEMPERATURE; REVERSE LEAKAGE CURRENTS; SCHOTTKY SOURCE/DRAIN (S/D) CONTACTS; SOLID PHASE CRYSTALLIZATION;

THIN FILM TRANSISTORS;

EID: 33750919479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387136     Document Type: Article

References (26)

1. T. Sameshima, S. Usui, and M. Sekiya, IEEE Electron Device Lett. EDL-7, 276 (1986).
2. C. H. Oh, M. Ozawa, and M. Matsumura, Jpn. J. Appl. Phys., Part 2 37, L492 (1998).
3. M. Miyao, M. Moniwa, K. Kusukawa, and W. Sinke, J. Appl. Phys. 64, 3018 (1988).
4. G. L. Olson and J. A. Roth, in Thin Films and Epitaxy, Handbook of Crystal Growth, Vol. 3, edited by, D. T. J. Hurle, (Elsevier, Amsterdam, 1994), Pt. A, p. 280.
5. C. Spinella, S. Lombardo, and F. Priolo, J. Appl. Phys. 84, 3018 (1998).
6. M. Miyao, E. Murakami, H. Etoh, K. Nakagawa, and A. Nishida, J. Cryst. Growth 111, 912 (1991).
7. M. Miyao and K. Nakagawa, Jpn. J. Appl. Phys., Part 1 33, 3791 (1994).
8. M. Miyao, K. Nakagawa, H. Nakahara, Y. Kiyota, and M. Kondo, Appl. Surf. Sci. 102, 360 (1996).
9. N. Sugii, K. Nakagawa, S. Yamaguchi, and M. Miyao, Appl. Phys. Lett. 75, 2948 (1999).
10. T. Maeda, K. Ikeda, S. Nakaharai, T. Tezuka, N. Sugiyama, Y. Moriyama, and S. Takagi, IEEE Electron Device Lett. EDL-26, 102 (2005).
11. I. Tsunoda, A. Kenjo, T. Sadoh, and M. Miyao, Appl. Surf. Sci. 224, 231 (2004).
12. I. Tsunoda, K. Nagatomo, A. Kenjo, T. Sadoh, and M. Miyao, Thin Solid Films 451-452C, 489 (2004).
13. H. Kanno, I. Tsunoda, A. Kenjo, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 82, 2148 (2003).
14. H. Kanno, A. Kenjo, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 85, 899 (2004).
15. H. Kanno, A. Kenjo, and M. Miyao, J. Cryst. Growth 279, 1 (2005).
16. K. Maex and M. Van Rossum, Properties of Metal Silicides (INSPEC, London, 1995), p. 192.
17. E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. Van Meirhaeghe, S. Forment, and P. Clauws, Appl. Phys. Lett. 88, 183506 (2006).
18. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap., pp. 259-291.
19. M. Hack and A. Lewis, IEEE Electron Device Lett. EDL-12, 203 (1991).
20. M. Valdinoci, L. Colalongo, G. Baccarani, G. Furtunato, A. Pecora, and I. Policicchio, IEEE Trans. Electron Devices TED-44, 2234 (1997).
21. T. Sadoh, Y. Ohyama, A. Kenjo, K. Ikeda, Y. Yamashita, and M. Miyao, Jpn. J. Appl. Phys., Part 1 45, 4370 (2006).
22. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays, 2nd ed. (Kluwer, Boston, 1998), Chap..
23. M. Nishisaka and T. Asano, Jpn. J. Appl. Phys., Part 1 37, 1295 (1998).
24. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap., p. 33.
25. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Ref.), Chap., p. 441.
26. J. E. Chung, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices TED-38, 1362 (1991).