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Volumn 4, Issue 6, 2011, Pages
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High-electron-mobility Ge n-channel metal-oxide-semiconductor field-effect transistors with high-pressure oxidized Y2O3
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Author keywords
[No Author keywords available]
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Indexed keywords
EFFECTIVE MOBILITIES;
HIGH ELECTRON MOBILITY;
IMPERFECT INTERFACE;
INTERFACE STATE DENSITY;
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR;
MOBILITY ENHANCEMENT;
N-CHANNEL;
TEMPERATURE DEPENDENCE;
DESORPTION;
DIELECTRIC DEVICES;
DIELECTRIC FILMS;
ELECTRON MOBILITY;
GATE DIELECTRICS;
GATES (TRANSISTOR);
GERMANIUM;
GERMANIUM OXIDES;
HIGH PRESSURE EFFECTS;
MOSFET DEVICES;
PASSIVATION;
TRANSISTORS;
YTTRIUM;
YTTRIUM OXIDE;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 79958792437
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.4.064201 Document Type: Article |
Times cited : (85)
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References (16)
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