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Volumn 4, Issue 6, 2011, Pages

High-electron-mobility Ge n-channel metal-oxide-semiconductor field-effect transistors with high-pressure oxidized Y2O3

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MOBILITIES; HIGH ELECTRON MOBILITY; IMPERFECT INTERFACE; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY ENHANCEMENT; N-CHANNEL; TEMPERATURE DEPENDENCE;

EID: 79958792437     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.064201     Document Type: Article
Times cited : (85)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.