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Applied Physics Letters

Volumn 80, Issue 6, 2002, Pages 944-946

In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films

(5) Miyasaka, Mitsutoshi a Makihira, Kenji b Asano, Tanemasa b Polychroniadis, Efstathios c Stoemenos, John c

a SEIKO EPSON CORPORATION (Japan)

b KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

[110] ORIENTATION; AMORPHOUS SILICON THIN FILMS; CRYSTALLINE GRAINS; CRYSTALLINE GROWTH; CRYSTALLINE SLICES; FAST GROWTH RATE; FILM PLANES; IN-SITU ANNEALING; IN-SITU OBSERVATIONS; LEADING EDGE; METAL-INDUCED LATERAL CRYSTALLIZATION; NEEDLE-LIKE; NICKEL DISILICIDE; SUBGRAINS; TRANSMISSION ELECTRON MICROSCOPE;

AMORPHOUS FILMS; CRYSTALLITES; NEEDLES; NICKEL; NICKEL COMPOUNDS; PRECIPITATES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 79956011313 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1447014 Document Type: Article

Times cited : (90)

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