(GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1063-1068

  Hayashi, T ^a   Tanaka, M ^a,b   Nishinagaa, T ^a   Shimada, H ^a   Tsuchiya, H ^a   Otuka, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Diluted magnetic semiconductor; Ferromagnetic order; GaMnAs; Low temperature MBE

Indexed keywords

FERROMAGNETISM; FILM GROWTH; LATTICE CONSTANTS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; X RAY DIFFRACTION;

DILUTED MAGNETIC SEMICONDUCTOR; MAGNETOTRANSPORT MEASUREMENTS;

MAGNETIC SEMICONDUCTORS;

EID: 0031141824     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00937-2     Document Type: Article

References (16)

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10. We notice that other group are also studying GaMnAs independently: F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano and Y. Sugawara, The Spring Meeting of JSAP 29aw-3, March 1996; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and H. Iye, Appl. Phys. Lett. 69 (1996) 363; Y. Nishikawa and J. Yoshino, Proc. 15th Electronic Materials Symp., Paper-J3 Izu-Nagaoka, July (1996); J. De Boeck, A. Van Esch and G. Borghs, Proc. 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August (1996).
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12. We notice that other group are also studying GaMnAs independently: F. Matsukura, A. Shen, A. Oiwa, H. Ohno, S. Katsumoto, H. Iye, S. Sugano and Y. Sugawara, The Spring Meeting of JSAP 29aw-3, March 1996; H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto and H. Iye, Appl. Phys. Lett. 69 (1996) 363; Y. Nishikawa and J. Yoshino, Proc. 15th Electronic Materials Symp., Paper-J3 Izu-Nagaoka, July (1996); J. De Boeck, A. Van Esch and G. Borghs, Proc. 9th Int. Conf. on Molecular Beam Epitaxy, Malibu, USA, August (1996).
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