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Electrochemical and Solid-State Letters

Volumn 14, Issue 7, 2011, Pages

Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

(5) Sadoh, Taizoh a Kurosawa, Masashi a,b Hagihara, Takashi a Toko, Kaoru a,b Miyao, Masanobu a

a KYUSHU UNIVERSITY (Japan)

b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; FLEXIBLE SUBSTRATE; GE ON INSULATORS; HIGH VELOCITY; HIGH-SPEED; INSULATING SUBSTRATES; LOW TEMPERATURE FORMATION; LOW TEMPERATURES; METAL-INDUCED LATERAL CRYSTALLIZATION;

AMORPHOUS FILMS; CRYSTALLIZATION; GERMANIUM; PALLADIUM;

COPPER;

EID: 79959547655 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3582794 Document Type: Article

Times cited : (38)

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