Low-temperature fabrication of polycrystalline Si thin film using Al-induced crystallization without native Al oxide at amorphous Si/Al interface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 A, 2005, Pages 4770-4775

  Sugimoto, Youhei ^a   Takata, Naoki ^a   Hirota, Takeshi ^a   Ikeda, Ken Ichi ^a   Yoshida, Fuyuki ^a   Nakashima, Hideharu ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Aluminum induced crystallization; Low temperature process; Poly Si; Solid phase crystallization; Structural properties

Indexed keywords

ALUMINUM; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; OXIDATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AL-INDUCED CRYSTALLIZATION (AIC); LOW-TEMPERATURE PROCESS; SOLID-PHASE CRYSTALLIZATION;

POLYSILICON;

EID: 31644450940     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.4770     Document Type: Article

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