Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization

Solid-State Electronics

Volumn 53, Issue 11, 2009, Pages 1159-1164

  Toko, Kaoru ^a   Nakao, Isakane ^a   Sadoh, Taizoh ^a   Noguchi, Takashi ^b   Miyao, Masanobu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b UNIVERSITY OF THE RYUKYUS   (Japan)

Author keywords

Electrical characteristics; Poly Ge; Solid phase crystallization; Thin film transistor

Indexed keywords

ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; GE FILMS; GLASS SUBSTRATES; HIGH MOBILITY; HIGH-TEMPERATURE ANNEALING; LARGE-GRAIN; LOW TEMPERATURE ANNEALING; POST ANNEALING; SOLID PHASE CRYSTALLIZATION;

ANNEALING; CRYSTALLIZATION; ELECTRIC PROPERTIES; GERMANIUM; HOLE CONCENTRATION; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

CARRIER MOBILITY;

EID: 72049094013     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.08.002     Document Type: Article

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