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Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

In situ x-ray diffraction study of metal induced crystallization of amorphous germanium

(6) Knaepen, W a Gaudet, S b Detavernier, C a Van Meirhaeghe, R L a Sweet, J Jordan c Lavoie, C c

a GHENT UNIVERSITY (Belgium)

b ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL FILMS; AMORPHOUS GERMANIUMS; AMORPHOUS SILICON (A-SI); CRYSTALLIZATION BEHAVIORS; CRYSTALLIZATION PROCESS; CRYSTALLIZATION TEMPERATURES; GE FILMS; IN-SITU; METAL FILMS; METAL-INDUCED CRYSTALLIZATIONS; SIMILARITIES AND DIFFERENCES;

ALUMINUM; AMORPHOUS SEMICONDUCTORS; CHROMIUM; COBALT; COPPER; CRYSTALLIZATION; GERMANIUM; GOLD; HAFNIUM; IRIDIUM; MANGANESE; MANGANESE COMPOUNDS; METALLIC FILMS; METALS; MOLYBDENUM; NIOBIUM; PALLADIUM; PLATINUM; RHODIUM; SEMICONDUCTING SILICON COMPOUNDS; SILVER; SODIUM COMPOUNDS; TANTALUM; ZIRCONIUM;

AMORPHOUS SILICON;

EID: 65449123777 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3110722 Document Type: Article

Times cited : (112)

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