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Electrochemical and Solid-State Letters

Volumn 14, Issue 6, 2011, Pages

Au-induced low-temperature (∼250°C) crystallization of Si on insulator through layer-exchange process

(5) Park, Jong Hyeok a Kurosawa, Masashi a,b Kawabata, Naoyuki a Miyao, Masanobu a Sadoh, Taizoh a

a KYUSHU UNIVERSITY (Japan)

b NONE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; EXCHANGE PROCESS; FLEXIBLE SUBSTRATE; GROWTH TECHNIQUES; HIGH QUALITY; HIGH-EFFICIENCY SOLAR CELLS; HIGH-SPEED; INDUCED CRYSTALLIZATION; LOW TEMPERATURES; POLY-SI FILMS; SI-ON-INSULATOR; STACKED STRUCTURE; TEMPLATE LAYERS;

AMORPHOUS SILICON; CRYSTALLIZATION; GERMANIUM; THIN FILM TRANSISTORS;

GOLD;

EID: 79953791596 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3562275 Document Type: Article

Times cited : (40)

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