Strain relief and shape oscillations in site-controlled coherent SiGe islands

Nanotechnology

Volumn 24, Issue 33, 2013, Pages

  Hrauda, N ^a   Zhang, J J ^a,b   Groiss, H ^a,c   Etzelstorfer, T ^a   Holy V ^d   Bauer, G ^a   Deiter, C ^e   Seeck, O H ^e   Stangl, J ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^d CHARLES UNIVERSITY   (Czech Republic)

^e DESY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; CYCLIC DEVELOPMENT; OSCILLATORY CHANGES; SEMICONDUCTOR NANOSTRUCTURES; SHAPE OSCILLATION; SI (001) SUBSTRATE; STRAIN BEHAVIORS; STRAIN ENGINEERING;

SILICON ALLOYS; X RAY DIFFRACTION;

GERMANIUM;

EID: 84881173969     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/33/335707     Document Type: Article

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