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Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

Strain distribution in a transistor using self-assembled SiGe islands in source and drain regions

(5) Kar, G S a Kiravittaya, S a Denker, U a Nguyen, B Y a,b Schmidt, O G a

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b Free Scale Semiconductor (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; PATTERNED SUBSTRATES; STATIC RANDOM ACCESS MEMORY CELL; STRAIN DISTRIBUTION;

EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; RANDOM ACCESS STORAGE; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; STRAIN CONTROL; SUBSTRATES;

TRANSISTORS;

EID: 33745455943 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2214150 Document Type: Article

Times cited : (25)

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