Global faceting behavior of strained Ge islands on Si

Nanotechnology

Volumn 20, Issue 8, 2009, Pages

  Robinson, Jeremy T ^a   Rastelli, Armando ^b   Schmidt, Oliver ^b   Dubon, Oscar D ^c,d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b IFW DRESDEN   (Germany)

^c University of California Berkeley   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC FACETS; FINITE SETS; GE ISLANDS; HETEROEPITAXIAL; ISLAND SHAPES; ISLANDING; SI SUBSTRATES; SI(0 0 1); STABLE SURFACES; STARTING MATERIALS; STRAINED-GE;

GERMANIUM; SET THEORY; SINGLE CRYSTALS;

SILICON;

GERMANIUM; QUANTUM DOT; SILICON; NANOMATERIAL;

ARTICLE; GEOMETRY; PRIORITY JOURNAL; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; GERMANIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 65549150905     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/8/085708     Document Type: Article

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